Highly Oriented Growth of a Pb(Mg1/3Nb2/3)O 3 Thin Film on a Si(001) Substrate Using a TiN Buffer Layer

Yeon A. Shim, Chang June Yoo, Jong Ha Moon, Byung Teak Lee, Sang Sub Kim, Jin Hyeok Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A highly (001) oriented Pb(Mg1/3Nb2/3)O3 (PMN) thin film was successfully grown on a TiN buffered Si(001) substrate. The TiN buffer layer was epitaxially grown with an orientation relationship of [110](001)TiN ∥ [110](001)Si on Si(001) by pulsed laser deposition. The PMN films were deposited using a radio-frequency magnetron sputtering technique at 500-700°C. The crystallinity, epitaxial nature and microstructures of the fabricated multi-films were investigated using X-ray diffraction and transmission electron microscopy. It was found that a PMN thin film deposited at 650°C shows a dense columnar structure with preferential (001) orientation suggesting the possibility of growing epitaxial PMN thin films on Si substrates using a TiN buffer layer.

Original languageEnglish
Pages (from-to)7516-7519
Number of pages4
JournalJapanese Journal of Applied Physics
Volume42
Issue number12
DOIs
StatePublished - Dec 2003
Externally publishedYes

Keywords

  • Epitaxial thin film growth
  • Pb(MgNb)O (PMN)
  • Pulsed laser deposition
  • Sputtering
  • TEM
  • TiN

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