TY - JOUR
T1 - High-temperature annealing of TiO2 nanotube membranes for efficient dye-sensitized solar cells
AU - Mohammadpour, Fatemeh
AU - Altomare, Marco
AU - So, Seulgi
AU - Lee, Kiyoung
AU - Mokhtar, Mohamed
AU - Alshehri, Abdelmohsen
AU - Al-Thabaiti, Shaeel A.
AU - Schmuki, Patrik
N1 - Publisher Copyright:
© 2016 IOP Publishing Ltd.
PY - 2015/10/1
Y1 - 2015/10/1
N2 - We fabricate photo-anodes by transferring anodic TiO2 nanotube membranes in tube-top-down configuration on FTO glass, and use them for constructing frontside illuminated dye-sensitized solar cells. Prior to solar cell construction, the tube-based photo-anodes are crystallized at different temperatures (400-800 °C), and the effects of tube electron transport properties on the photovoltaic performance of the solar cells are investigated. We show that improved solar cell efficiencies (up to ca. 8.0%) can be reached by high-temperature treatment of the tube membranes. Consistent with electron transport time measurements, remarkably enhanced electron mobility is enabled when tube membranes are crystallized at 600 °C.
AB - We fabricate photo-anodes by transferring anodic TiO2 nanotube membranes in tube-top-down configuration on FTO glass, and use them for constructing frontside illuminated dye-sensitized solar cells. Prior to solar cell construction, the tube-based photo-anodes are crystallized at different temperatures (400-800 °C), and the effects of tube electron transport properties on the photovoltaic performance of the solar cells are investigated. We show that improved solar cell efficiencies (up to ca. 8.0%) can be reached by high-temperature treatment of the tube membranes. Consistent with electron transport time measurements, remarkably enhanced electron mobility is enabled when tube membranes are crystallized at 600 °C.
KW - TiO nanotube membrane
KW - anodization
KW - dye-sensitized solar cell
KW - electron transport
KW - high-temperature crystallization
UR - http://www.scopus.com/inward/record.url?scp=84948462108&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/31/1/014010
DO - 10.1088/0268-1242/31/1/014010
M3 - Article
AN - SCOPUS:84948462108
SN - 0268-1242
VL - 31
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 1
M1 - 014010
ER -