High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

Min Hoe Cho; Hyunju Seol; Hoichang Yang; Pil Sang Yun; Jong Uk Bae; Kwon Shik Park; Jae Kyeong Jeong

doi:10.1109/LED.2018.2812870

High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

Min Hoe Cho, Hyunju Seol, Hoichang Yang, Pil Sang Yun, Jong Uk Bae, Kwon Shik Park, Jae Kyeong Jeong

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

This letter reports the fabrication of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) via atomic layer deposition at a substrate temperature of 250 °C. The film thickness of In₂O₃, Ga₂O₃, and ZnO varied linearly with the number of deposition cycles. The cation composition of the IGZO film was controlled by an alternate stacking of In₂O₃, Ga₂O₃, and ZnO atomic layers. The fabricated a-IGZO TFTs exhibited a high electron mobility of 22.1 cm²/Vs, threshold voltage of 2.41 V, subthreshold gate swing of 0.30 V/decade, and an I_ON/OFF ratio of >1×10⁸.

Original language	English
Pages (from-to)	688-691
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	5
DOIs	https://doi.org/10.1109/LED.2018.2812870
State	Published - May 2018

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Atomic layer deposition
a-IGZO
high mobility
high performance
thin-film transistors

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@article{0275067304624ea786b5964396d1b9bf,

title = "High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition",

abstract = "This letter reports the fabrication of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) via atomic layer deposition at a substrate temperature of 250 °C. The film thickness of In2O3, Ga2O3, and ZnO varied linearly with the number of deposition cycles. The cation composition of the IGZO film was controlled by an alternate stacking of In2O3, Ga2O3, and ZnO atomic layers. The fabricated a-IGZO TFTs exhibited a high electron mobility of 22.1 cm2/Vs, threshold voltage of 2.41 V, subthreshold gate swing of 0.30 V/decade, and an ION/OFF ratio of >1×108.",

keywords = "Atomic layer deposition, a-IGZO, high mobility, high performance, thin-film transistors",

author = "Cho, {Min Hoe} and Hyunju Seol and Hoichang Yang and Yun, {Pil Sang} and Bae, {Jong Uk} and Park, {Kwon Shik} and Jeong, {Jae Kyeong}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = may,

doi = "10.1109/LED.2018.2812870",

language = "English",

volume = "39",

pages = "688--691",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

AU - Cho, Min Hoe

AU - Seol, Hyunju

AU - Yang, Hoichang

AU - Yun, Pil Sang

AU - Bae, Jong Uk

AU - Park, Kwon Shik

AU - Jeong, Jae Kyeong

PY - 2018/5

Y1 - 2018/5

N2 - This letter reports the fabrication of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) via atomic layer deposition at a substrate temperature of 250 °C. The film thickness of In2O3, Ga2O3, and ZnO varied linearly with the number of deposition cycles. The cation composition of the IGZO film was controlled by an alternate stacking of In2O3, Ga2O3, and ZnO atomic layers. The fabricated a-IGZO TFTs exhibited a high electron mobility of 22.1 cm2/Vs, threshold voltage of 2.41 V, subthreshold gate swing of 0.30 V/decade, and an ION/OFF ratio of >1×108.

AB - This letter reports the fabrication of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) via atomic layer deposition at a substrate temperature of 250 °C. The film thickness of In2O3, Ga2O3, and ZnO varied linearly with the number of deposition cycles. The cation composition of the IGZO film was controlled by an alternate stacking of In2O3, Ga2O3, and ZnO atomic layers. The fabricated a-IGZO TFTs exhibited a high electron mobility of 22.1 cm2/Vs, threshold voltage of 2.41 V, subthreshold gate swing of 0.30 V/decade, and an ION/OFF ratio of >1×108.

KW - Atomic layer deposition

KW - a-IGZO

KW - high mobility

KW - high performance

KW - thin-film transistors

UR - http://www.scopus.com/inward/record.url?scp=85043382124&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2812870

DO - 10.1109/LED.2018.2812870

M3 - Article

AN - SCOPUS:85043382124

SN - 0741-3106

VL - 39

SP - 688

EP - 691

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 5

ER -

High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition

Abstract

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Keywords

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