High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

Su Min Hwang; Adrian Adalberto Garay; Wan In Lee; Chee Won Chung

doi:10.1016/j.tsf.2014.12.031

High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

Su Min Hwang, Adrian Adalberto Garay, Wan In Lee, Chee Won Chung

Inha University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH₃OH/Ar gas mixture. As the CH₃OH concentration in CH₃OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH₃OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO₂ and RuO₃ compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction.

Original language	English
Pages (from-to)	28-33
Number of pages	6
Journal	Thin Solid Films
Volume	587
DOIs	https://doi.org/10.1016/j.tsf.2014.12.031
State	Published - 31 Jul 2015

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V.

Keywords

CHOH/Ar gas
Inductively coupled plasma reactive ion etching
Magnetic tunnel junction
Ru thin films

Access to Document

10.1016/j.tsf.2014.12.031

Cite this

@article{390db8180d474a54b518a35c3ab30cb2,

title = "High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture",

abstract = "Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH3OH/Ar gas mixture. As the CH3OH concentration in CH3OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH3OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO2 and RuO3 compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction.",

keywords = "CHOH/Ar gas, Inductively coupled plasma reactive ion etching, Magnetic tunnel junction, Ru thin films",

author = "Hwang, {Su Min} and Garay, {Adrian Adalberto} and Lee, {Wan In} and Chung, {Chee Won}",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier B.V.",

year = "2015",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2014.12.031",

language = "English",

volume = "587",

pages = "28--33",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

AU - Hwang, Su Min

AU - Garay, Adrian Adalberto

AU - Lee, Wan In

AU - Chung, Chee Won

PY - 2015/7/31

Y1 - 2015/7/31

N2 - Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH3OH/Ar gas mixture. As the CH3OH concentration in CH3OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH3OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO2 and RuO3 compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction.

AB - Inductively coupled plasma reactive ion etching (ICPRIE) of Ru thin films patterned with TiN hard masks was investigated using a CH3OH/Ar gas mixture. As the CH3OH concentration in CH3OH/Ar increased, the etch rates of Ru thin films and TiN hard masks decreased. However, the etch selectivity of Ru films on TiN hard masks increased and the etch slope of Ru film improved at 25% CH3OH/Ar. With increasing ICP radiofrequency power and direct current bias voltage and decreasing process pressure, the etch rates of Ru films increased, and the etch profiles were enhanced without redeposition on the sidewall. Optical emission spectroscopy and X-ray photoelectron spectroscopy were employed to analyze the plasma and surface chemistry. Based on these results, Ru thin films were oxidized to RuO2 and RuO3 compounds that were removed by sputtering of ions and the etching of Ru thin films followed a physical sputtering with the assistance of chemical reaction.

KW - CHOH/Ar gas

KW - Inductively coupled plasma reactive ion etching

KW - Magnetic tunnel junction

KW - Ru thin films

UR - http://www.scopus.com/inward/record.url?scp=84929284382&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.12.031

DO - 10.1016/j.tsf.2014.12.031

M3 - Article

AN - SCOPUS:84929284382

SN - 0040-6090

VL - 587

SP - 28

EP - 33

JO - Thin Solid Films

JF - Thin Solid Films

ER -

High density plasma reactive ion etching of Ru thin films using non-corrosive gas mixture

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this