Growth of ZnO nanorods via metalorganic chemical vapor deposition and their electrical properties

Jae Young Park; Hwangyou Oh; Ju Jin Kim; Sang Sub Kim

doi:10.1016/j.jcrysgro.2005.10.058

Growth of ZnO nanorods via metalorganic chemical vapor deposition and their electrical properties

Jae Young Park, Hwangyou Oh, Ju Jin Kim, Sang Sub Kim

Research output: Contribution to journal › Conference article › peer-review

24 Scopus citations

Abstract

Growth behaviors of ZnO nanorods synthesized by catalyst-free metalorganic chemical vapor deposition were studied as functions of various growth parameters such as growth temperature, precursor ratio and substrate type. We found that their sizes, shapes and alignment nature were strongly dependent on such parameters. However, individual ZnO nanorods were of single-crystalline nature as well as of high optical quality. Field effect transistors (FETs) using single ZnO nanorods were fabricated to study their electrical properties. Ultraviolet illumination and vacuum environment resulted in a significant increase of mobile electrons. Investigation on temperature-dependent electrical transport revealed that thermionic emission dominated as a current transport mechanism in the FETs.

Original language	English
Pages (from-to)	145-148
Number of pages	4
Journal	Journal of Crystal Growth
Volume	287
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.058
State	Published - 18 Jan 2006
Externally published	Yes
Event	Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials - Duration: 3 Jul 2005 → 8 Jul 2005

Keywords

A1. Nanostructures
A3. Metalorganic chemical vapor deposition
B1. Zinc oxide
B2. Semiconducting II-VI materials
B3. Field effect transistors

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10.1016/j.jcrysgro.2005.10.058

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title = "Growth of ZnO nanorods via metalorganic chemical vapor deposition and their electrical properties",

abstract = "Growth behaviors of ZnO nanorods synthesized by catalyst-free metalorganic chemical vapor deposition were studied as functions of various growth parameters such as growth temperature, precursor ratio and substrate type. We found that their sizes, shapes and alignment nature were strongly dependent on such parameters. However, individual ZnO nanorods were of single-crystalline nature as well as of high optical quality. Field effect transistors (FETs) using single ZnO nanorods were fabricated to study their electrical properties. Ultraviolet illumination and vacuum environment resulted in a significant increase of mobile electrons. Investigation on temperature-dependent electrical transport revealed that thermionic emission dominated as a current transport mechanism in the FETs.",

keywords = "A1. Nanostructures, A3. Metalorganic chemical vapor deposition, B1. Zinc oxide, B2. Semiconducting II-VI materials, B3. Field effect transistors",

author = "Park, {Jae Young} and Hwangyou Oh and Kim, {Ju Jin} and Kim, {Sang Sub}",

year = "2006",

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doi = "10.1016/j.jcrysgro.2005.10.058",

language = "English",

volume = "287",

pages = "145--148",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials ; Conference date: 03-07-2005 Through 08-07-2005",

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T1 - Growth of ZnO nanorods via metalorganic chemical vapor deposition and their electrical properties

AU - Park, Jae Young

AU - Oh, Hwangyou

AU - Kim, Ju Jin

AU - Kim, Sang Sub

PY - 2006/1/18

Y1 - 2006/1/18

N2 - Growth behaviors of ZnO nanorods synthesized by catalyst-free metalorganic chemical vapor deposition were studied as functions of various growth parameters such as growth temperature, precursor ratio and substrate type. We found that their sizes, shapes and alignment nature were strongly dependent on such parameters. However, individual ZnO nanorods were of single-crystalline nature as well as of high optical quality. Field effect transistors (FETs) using single ZnO nanorods were fabricated to study their electrical properties. Ultraviolet illumination and vacuum environment resulted in a significant increase of mobile electrons. Investigation on temperature-dependent electrical transport revealed that thermionic emission dominated as a current transport mechanism in the FETs.

AB - Growth behaviors of ZnO nanorods synthesized by catalyst-free metalorganic chemical vapor deposition were studied as functions of various growth parameters such as growth temperature, precursor ratio and substrate type. We found that their sizes, shapes and alignment nature were strongly dependent on such parameters. However, individual ZnO nanorods were of single-crystalline nature as well as of high optical quality. Field effect transistors (FETs) using single ZnO nanorods were fabricated to study their electrical properties. Ultraviolet illumination and vacuum environment resulted in a significant increase of mobile electrons. Investigation on temperature-dependent electrical transport revealed that thermionic emission dominated as a current transport mechanism in the FETs.

KW - A1. Nanostructures

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Zinc oxide

KW - B2. Semiconducting II-VI materials

KW - B3. Field effect transistors

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U2 - 10.1016/j.jcrysgro.2005.10.058

DO - 10.1016/j.jcrysgro.2005.10.058

M3 - Conference article

AN - SCOPUS:29844434142

SN - 0022-0248

VL - 287

SP - 145

EP - 148

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

T2 - Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials

Y2 - 3 July 2005 through 8 July 2005

ER -

Growth of ZnO nanorods via metalorganic chemical vapor deposition and their electrical properties

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Keywords

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