Growth of epitaxial p-type ZnO thin films by codoping of Ga and N

Manoj Kumar; Tae Hwan Kim; Sang Sub Kim; Byung Teak Lee

doi:10.1063/1.2338527

Growth of epitaxial p-type ZnO thin films by codoping of Ga and N

Manoj Kumar, Tae Hwan Kim, Sang Sub Kim, Byung Teak Lee

Chonnam National University

Research output: Contribution to journal › Article › peer-review

112 Scopus citations

Abstract

Codoping of Ga and N was utilized to realize p-type conduction in ZnO films using rf magnetron sputtering. The films obtained at 550°C on sapphire showed resistivity and hole concentrations of 38 Ω cm and 3.9 × 10¹⁷ cm^-3, respectively. ZnO films also showed a p-type behavior on p-Si with better electrical properties. ZnO homojunctions synthesized by in situ deposition of Ga-N codoped p-ZnO layer on Ga doped n-ZnO layer showed clear p-n diode characteristics. Low temperature photoluminescence spectra of codoped films also revealed a dominant peak at 3.12 eV. The codoped films showed a dense columnar structure with a c-axis preferred orientation.

Original language	English
Article number	112103
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2338527
State	Published - 2006
Externally published	Yes

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title = "Growth of epitaxial p-type ZnO thin films by codoping of Ga and N",

abstract = "Codoping of Ga and N was utilized to realize p-type conduction in ZnO films using rf magnetron sputtering. The films obtained at 550°C on sapphire showed resistivity and hole concentrations of 38 Ω cm and 3.9 × 1017 cm-3, respectively. ZnO films also showed a p-type behavior on p-Si with better electrical properties. ZnO homojunctions synthesized by in situ deposition of Ga-N codoped p-ZnO layer on Ga doped n-ZnO layer showed clear p-n diode characteristics. Low temperature photoluminescence spectra of codoped films also revealed a dominant peak at 3.12 eV. The codoped films showed a dense columnar structure with a c-axis preferred orientation.",

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year = "2006",

doi = "10.1063/1.2338527",

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journal = "Applied Physics Letters",

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T1 - Growth of epitaxial p-type ZnO thin films by codoping of Ga and N

AU - Kumar, Manoj

AU - Kim, Tae Hwan

AU - Kim, Sang Sub

AU - Lee, Byung Teak

PY - 2006

Y1 - 2006

N2 - Codoping of Ga and N was utilized to realize p-type conduction in ZnO films using rf magnetron sputtering. The films obtained at 550°C on sapphire showed resistivity and hole concentrations of 38 Ω cm and 3.9 × 1017 cm-3, respectively. ZnO films also showed a p-type behavior on p-Si with better electrical properties. ZnO homojunctions synthesized by in situ deposition of Ga-N codoped p-ZnO layer on Ga doped n-ZnO layer showed clear p-n diode characteristics. Low temperature photoluminescence spectra of codoped films also revealed a dominant peak at 3.12 eV. The codoped films showed a dense columnar structure with a c-axis preferred orientation.

AB - Codoping of Ga and N was utilized to realize p-type conduction in ZnO films using rf magnetron sputtering. The films obtained at 550°C on sapphire showed resistivity and hole concentrations of 38 Ω cm and 3.9 × 1017 cm-3, respectively. ZnO films also showed a p-type behavior on p-Si with better electrical properties. ZnO homojunctions synthesized by in situ deposition of Ga-N codoped p-ZnO layer on Ga doped n-ZnO layer showed clear p-n diode characteristics. Low temperature photoluminescence spectra of codoped films also revealed a dominant peak at 3.12 eV. The codoped films showed a dense columnar structure with a c-axis preferred orientation.

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DO - 10.1063/1.2338527

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112103

ER -

Growth of epitaxial p-type ZnO thin films by codoping of Ga and N

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