Growing BaTiO₃ thin films on Si(100) with MgO-buffer layers by sputtering

Epitaxial thin films of MgO were grown on Si(100) with a cube-on-cube relationship as a buffer layer for the growth of ferroelectric BaTiO₃ thin films by RF magnetron sputter deposition. Partially (001) or (100) textured BaTiO₃ thin films were obtained on Si(100) with the MgO buffer layer. On the other hand, randomly oriented BaTiO₃ thin films with large-scale cracks were prepared without the MgO layer. The comparison of the crystallographic orientation, morphology and dielectric properties of the BaTiO₃ thin films on Si(100) with and without the MgO layer revealed the favourable influence of the MgO-buffer layer on the growth of BaTiO₃ thin films on Si(100) substrates.