Gate stack technology for nanoscale devices

Byoung Hun Lee; Paul Kirsch; Seungchul Song; Rino Choi; Rajarao Jammy

doi:10.1109/NMDC.2006.4388841

Gate stack technology for nanoscale devices

Byoung Hun Lee, Paul Kirsch, Seungchul Song, Rino Choi, Rajarao Jammy

SEMATECH

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The historical evolution of gate stack technology for silicon devices is reviewed to provide insight on the challenges in this technology for scaled nanoscale CMOS devices and non-Si-based devices.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	206-207
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388841
State	Published - 2006
Externally published	Yes
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 22 Oct 2006 → 25 Oct 2006

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Conference

Conference	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	22/10/06 → 25/10/06

Keywords

Gate stack
High transport channel
High-k dielectrics

Access to Document

10.1109/NMDC.2006.4388841

Cite this

@inproceedings{80b99e760c5f48708dc2e281e7be282e,

title = "Gate stack technology for nanoscale devices",

abstract = "The historical evolution of gate stack technology for silicon devices is reviewed to provide insight on the challenges in this technology for scaled nanoscale CMOS devices and non-Si-based devices.",

keywords = "Gate stack, High transport channel, High-k dielectrics",

author = "Lee, {Byoung Hun} and Paul Kirsch and Seungchul Song and Rino Choi and Rajarao Jammy",

year = "2006",

doi = "10.1109/NMDC.2006.4388841",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "206--207",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Lee, BH, Kirsch, P, Song, S, Choi, R & Jammy, R 2006, Gate stack technology for nanoscale devices. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388841, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 206-207, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 22/10/06. https://doi.org/10.1109/NMDC.2006.4388841

Gate stack technology for nanoscale devices. / Lee, Byoung Hun; Kirsch, Paul; Song, Seungchul et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 206-207 4388841 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Gate stack technology for nanoscale devices

AU - Lee, Byoung Hun

AU - Kirsch, Paul

AU - Song, Seungchul

AU - Choi, Rino

AU - Jammy, Rajarao

PY - 2006

Y1 - 2006

N2 - The historical evolution of gate stack technology for silicon devices is reviewed to provide insight on the challenges in this technology for scaled nanoscale CMOS devices and non-Si-based devices.

AB - The historical evolution of gate stack technology for silicon devices is reviewed to provide insight on the challenges in this technology for scaled nanoscale CMOS devices and non-Si-based devices.

KW - Gate stack

KW - High transport channel

KW - High-k dielectrics

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U2 - 10.1109/NMDC.2006.4388841

DO - 10.1109/NMDC.2006.4388841

M3 - Conference contribution

AN - SCOPUS:50249129236

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 206

EP - 207

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Gate stack technology for nanoscale devices

Abstract

Publication series

Conference

Keywords

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