Forming, Compliance Free Operation in Al2O3/TiOxBased RRAM Array Using Naturally Generated AlOxInterlayer

Sungjoon Kim; Tae Hyeon Kim; Kyungho Hong; Hyungjin Kim; Byung Gook Park

doi:10.1109/SNW56633.2022.9889049

Forming, Compliance Free Operation in Al₂O₃/TiO_xBased RRAM Array Using Naturally Generated AlO_xInterlayer

Sungjoon Kim, Tae Hyeon Kim, Kyungho Hong, Hyungjin Kim, Byung Gook Park

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, an AlOx layer was inserted into RRAM to address the forming and compliance current problems that concern filamentary RRAM, and its array performance was investigated. The top electrode deposited on TiOx was changed to Al to form an AlOx layer. And it was found that the AlOx layer efficiently prevents the switching layer from breakdown during the forming step. To ensure reliability, DC endurance operation of 500 cycles was done, and 3×l04 sec retention was confirmed. Finally, the desired weight could be precisely transferred to the 4x4 array, with a VMM error of less than 5%.

Original language	English
Title of host publication	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665459792
DOIs	https://doi.org/10.1109/SNW56633.2022.9889049
State	Published - 2022
Event	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 - Honolulu, United States Duration: 11 Jun 2022 → 12 Jun 2022

Publication series

Name	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022

Conference

Conference	2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022
Country/Territory	United States
City	Honolulu
Period	11/06/22 → 12/06/22

Bibliographical note

Publisher Copyright:
© 2022 IEEE.

Keywords

RRAM
forming free
synaptic device

Access to Document

10.1109/SNW56633.2022.9889049

Cite this

Kim, S., Kim, T. H., Hong, K., Kim, H., & Park, B. G. (2022). Forming, Compliance Free Operation in Al₂O₃/TiO_xBased RRAM Array Using Naturally Generated AlO_xInterlayer. In 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SNW56633.2022.9889049

@inproceedings{cf2f41413b994bd6a2fcf11f9c63aa39,

title = "Forming, Compliance Free Operation in Al2O3/TiOxBased RRAM Array Using Naturally Generated AlOxInterlayer",

abstract = "In this study, an AlOx layer was inserted into RRAM to address the forming and compliance current problems that concern filamentary RRAM, and its array performance was investigated. The top electrode deposited on TiOx was changed to Al to form an AlOx layer. And it was found that the AlOx layer efficiently prevents the switching layer from breakdown during the forming step. To ensure reliability, DC endurance operation of 500 cycles was done, and 3×l04 sec retention was confirmed. Finally, the desired weight could be precisely transferred to the 4x4 array, with a VMM error of less than 5%.",

keywords = "RRAM, forming free, synaptic device",

author = "Sungjoon Kim and Kim, {Tae Hyeon} and Kyungho Hong and Hyungjin Kim and Park, {Byung Gook}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022 ; Conference date: 11-06-2022 Through 12-06-2022",

year = "2022",

doi = "10.1109/SNW56633.2022.9889049",

language = "English",

series = "2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022",

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Kim, S, Kim, TH, Hong, K, Kim, H & Park, BG 2022, Forming, Compliance Free Operation in Al₂O₃/TiO_xBased RRAM Array Using Naturally Generated AlO_xInterlayer. in 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022, Honolulu, United States, 11/06/22. https://doi.org/10.1109/SNW56633.2022.9889049

Forming, Compliance Free Operation in Al₂O₃/TiO_xBased RRAM Array Using Naturally Generated AlO_xInterlayer. / Kim, Sungjoon; Kim, Tae Hyeon; Hong, Kyungho et al.
2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE Silicon Nanoelectronics Workshop, SNW 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this study, an AlOx layer was inserted into RRAM to address the forming and compliance current problems that concern filamentary RRAM, and its array performance was investigated. The top electrode deposited on TiOx was changed to Al to form an AlOx layer. And it was found that the AlOx layer efficiently prevents the switching layer from breakdown during the forming step. To ensure reliability, DC endurance operation of 500 cycles was done, and 3×l04 sec retention was confirmed. Finally, the desired weight could be precisely transferred to the 4x4 array, with a VMM error of less than 5%.

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