Flexible and wavelength-selective MoS2 phototransistors with monolithically integrated transmission color filters

Geonwook Yoo, Sol Lea Choi, Sang Jin Park, Kyu Tae Lee, Sanghyun Lee, Min Suk Oh, Junseok Heo, Hui Joon Park

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2 phototransistors on a polyarylate substrate exhibit decent electrical characteristics (μ FE > 64.4 cm2 /Vs, on/off ratio > 106), and the integrated F-P filters, being able to cover whole visible spectrum, successfully modulate the spectral response characteristics of MoS2 phototransistors from ∼495 nm (blue) to ∼590 nm (amber). Furthermore, power dependence of both responsivity and specific detectivity shows similar trend with other reports, dominated by the photogating effect. When combined with large-area monolayer MoS2 for optical property enhancement and array processing, our results can be further developed into ultra-thin flexible photodetectors for wearables, conformable image sensor, and other optoelectronic applications.

Original languageEnglish
Article number40945
JournalScientific Reports
Volume7
DOIs
StatePublished - 18 Jan 2017
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 The Author(s).

Fingerprint

Dive into the research topics of 'Flexible and wavelength-selective MoS2 phototransistors with monolithically integrated transmission color filters'. Together they form a unique fingerprint.

Cite this