Fabrication of polymer-based electronic circuits using photolithography

Alexander A. Zakhidov; Hon Hang Fong; John A. Defranco; Jin Kyun Lee; Priscilla G. Taylor; Christopher K. Ober; George G. Malliaras; Mingqian He; Michael G. Kane

doi:10.1063/1.3650474

Fabrication of polymer-based electronic circuits using photolithography

Alexander A. Zakhidov, Hon Hang Fong, John A. Defranco, Jin Kyun Lee, Priscilla G. Taylor, Christopher K. Ober, George G. Malliaras, Mingqian He, Michael G. Kane

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We exploited the concept of solvent orthogonality to enable photolithography for high-resolution, high-throughput fabrication of electronic circuits based on a polymeric semiconductor. An array of ring oscillators utilizing top contact polymer thin film transistors with 1 m channel length has been fabricated on a 100 mm wafer scale. We used high performance, air stable poly(2,5-bis(thiophene-2-yl)-(3,7-ditri-decanyltetrathienoacene) as our active semiconducting material. Owing to the small channel length and small overlap length, these devices have a signal propagation delay as low as 7 s/stage.

Original language	English
Article number	183308
Journal	Applied Physics Letters
Volume	99
Issue number	18
DOIs	https://doi.org/10.1063/1.3650474
State	Published - 31 Oct 2011
Externally published	Yes

Bibliographical note

Funding Information:
A.A.Z. and H.H.F. contributed equally to this work. We gratefully acknowledge support from the National Science Foundation (Materials World Network DMR-0908994 and Center for NanoScale Systems EEC-0646547) and from Corning, Inc. The work was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant No. ECS-0335765). A.A.Z. acknowledges support from the Alexander von Humboldt Foundation.

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title = "Fabrication of polymer-based electronic circuits using photolithography",

abstract = "We exploited the concept of solvent orthogonality to enable photolithography for high-resolution, high-throughput fabrication of electronic circuits based on a polymeric semiconductor. An array of ring oscillators utilizing top contact polymer thin film transistors with 1 m channel length has been fabricated on a 100 mm wafer scale. We used high performance, air stable poly(2,5-bis(thiophene-2-yl)-(3,7-ditri-decanyltetrathienoacene) as our active semiconducting material. Owing to the small channel length and small overlap length, these devices have a signal propagation delay as low as 7 s/stage.",

author = "Zakhidov, {Alexander A.} and Fong, {Hon Hang} and Defranco, {John A.} and Lee, {Jin Kyun} and Taylor, {Priscilla G.} and Ober, {Christopher K.} and Malliaras, {George G.} and Mingqian He and Kane, {Michael G.}",

note = "Funding Information: A.A.Z. and H.H.F. contributed equally to this work. We gratefully acknowledge support from the National Science Foundation (Materials World Network DMR-0908994 and Center for NanoScale Systems EEC-0646547) and from Corning, Inc. The work was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant No. ECS-0335765). A.A.Z. acknowledges support from the Alexander von Humboldt Foundation.",

year = "2011",

month = oct,

day = "31",

doi = "10.1063/1.3650474",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

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AU - Zakhidov, Alexander A.

AU - Fong, Hon Hang

AU - Defranco, John A.

AU - Lee, Jin Kyun

AU - Taylor, Priscilla G.

AU - Ober, Christopher K.

AU - Malliaras, George G.

AU - He, Mingqian

AU - Kane, Michael G.

N1 - Funding Information: A.A.Z. and H.H.F. contributed equally to this work. We gratefully acknowledge support from the National Science Foundation (Materials World Network DMR-0908994 and Center for NanoScale Systems EEC-0646547) and from Corning, Inc. The work was performed in part at the Cornell NanoScale Facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant No. ECS-0335765). A.A.Z. acknowledges support from the Alexander von Humboldt Foundation.

PY - 2011/10/31

Y1 - 2011/10/31

N2 - We exploited the concept of solvent orthogonality to enable photolithography for high-resolution, high-throughput fabrication of electronic circuits based on a polymeric semiconductor. An array of ring oscillators utilizing top contact polymer thin film transistors with 1 m channel length has been fabricated on a 100 mm wafer scale. We used high performance, air stable poly(2,5-bis(thiophene-2-yl)-(3,7-ditri-decanyltetrathienoacene) as our active semiconducting material. Owing to the small channel length and small overlap length, these devices have a signal propagation delay as low as 7 s/stage.

AB - We exploited the concept of solvent orthogonality to enable photolithography for high-resolution, high-throughput fabrication of electronic circuits based on a polymeric semiconductor. An array of ring oscillators utilizing top contact polymer thin film transistors with 1 m channel length has been fabricated on a 100 mm wafer scale. We used high performance, air stable poly(2,5-bis(thiophene-2-yl)-(3,7-ditri-decanyltetrathienoacene) as our active semiconducting material. Owing to the small channel length and small overlap length, these devices have a signal propagation delay as low as 7 s/stage.

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VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 183308

ER -

Fabrication of polymer-based electronic circuits using photolithography

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