Abstract
On the basis of on-chip trench structure, multiple-networked SnO 2 nanowire sensors are successfully fabricated by the use of the selective growth of SnO 2 nanowires and their entanglement nature. The sensing performance of the trench-structured SnO 2 nanowire sensors is investigated in terms of NO 2. The density of nanowire junctions is deliberately controlled via changing either the trench width or the time of nanowire growth. A model is proposed to provide a general rule for preparing trench-structured nanowire sensors of superior sensing performance.
Original language | English |
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Pages (from-to) | 672-678 |
Number of pages | 7 |
Journal | Sensors and Actuators B: Chemical |
Volume | 171-172 |
DOIs | |
State | Published - Aug 2012 |
Keywords
- Gas sensing
- Nanowire
- SnO
- Trench