Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics

H. Y. Ryu; K. H. Ha; J. H. Chae; K. S. Kim; J. K. Son; O. H. Nam; Y. J. Park; J. I. Shim

doi:10.1063/1.2364273

Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics

H. Y. Ryu
, K. H. Ha
, J. H. Chae
, K. S. Kim
, J. K. Son
, O. H. Nam
, Y. J. Park
, J. I. Shim

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405 nm. Based on semiconductor rate equations, the radiative efficiency is unambiguously determined by the analysis of electroluminescence characteristics. The radiative efficiency exceeds 70% even far below threshold of ∼3 mA at a high temperature of 80 °C. This highly radiative characteristic is attributed to reduced contribution of nonradiative recombination in LDs with low-dislocation-density active material. It is also found that the radiative efficiency is almost independent of threshold current, indicating that nonradiative recombination is not a major factor which determines lasing threshold in 405 nm emitting InGaN LDs having low dislocation density.

Original language	English
Article number	171106
Journal	Applied Physics Letters
Volume	89
Issue number	17
DOIs	https://doi.org/10.1063/1.2364273
State	Published - 2006
Externally published	Yes

Access to Document

10.1063/1.2364273

Cite this

@article{e8c90c73449d40da9a875d69b3cf9133,

title = "Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics",

abstract = "The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405 nm. Based on semiconductor rate equations, the radiative efficiency is unambiguously determined by the analysis of electroluminescence characteristics. The radiative efficiency exceeds 70\% even far below threshold of ∼3 mA at a high temperature of 80 °C. This highly radiative characteristic is attributed to reduced contribution of nonradiative recombination in LDs with low-dislocation-density active material. It is also found that the radiative efficiency is almost independent of threshold current, indicating that nonradiative recombination is not a major factor which determines lasing threshold in 405 nm emitting InGaN LDs having low dislocation density.",

author = "Ryu, \{H. Y.\} and Ha, \{K. H.\} and Chae, \{J. H.\} and Kim, \{K. S.\} and Son, \{J. K.\} and Nam, \{O. H.\} and Park, \{Y. J.\} and Shim, \{J. I.\}",

year = "2006",

doi = "10.1063/1.2364273",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics

AU - Ryu, H. Y.

AU - Ha, K. H.

AU - Chae, J. H.

AU - Kim, K. S.

AU - Son, J. K.

AU - Nam, O. H.

AU - Park, Y. J.

AU - Shim, J. I.

PY - 2006

Y1 - 2006

N2 - The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405 nm. Based on semiconductor rate equations, the radiative efficiency is unambiguously determined by the analysis of electroluminescence characteristics. The radiative efficiency exceeds 70% even far below threshold of ∼3 mA at a high temperature of 80 °C. This highly radiative characteristic is attributed to reduced contribution of nonradiative recombination in LDs with low-dislocation-density active material. It is also found that the radiative efficiency is almost independent of threshold current, indicating that nonradiative recombination is not a major factor which determines lasing threshold in 405 nm emitting InGaN LDs having low dislocation density.

AB - The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405 nm. Based on semiconductor rate equations, the radiative efficiency is unambiguously determined by the analysis of electroluminescence characteristics. The radiative efficiency exceeds 70% even far below threshold of ∼3 mA at a high temperature of 80 °C. This highly radiative characteristic is attributed to reduced contribution of nonradiative recombination in LDs with low-dislocation-density active material. It is also found that the radiative efficiency is almost independent of threshold current, indicating that nonradiative recombination is not a major factor which determines lasing threshold in 405 nm emitting InGaN LDs having low dislocation density.

UR - https://www.scopus.com/pages/publications/33750454413

U2 - 10.1063/1.2364273

DO - 10.1063/1.2364273

M3 - Article

AN - SCOPUS:33750454413

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171106

ER -

Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics

Abstract

Access to Document

Other files and links

Fingerprint

Cite this