Epitaxial perovskite oxide thin films on Ba(Ti,Zr)O3 substrates for strain-induced electric/magnetic property changes near room temperature

K. D. Sung, Y. A. Park, N. Hur, J. H. Jung, D. H. Kim, B. W. Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have reported the epitaxial growth and the electric/magnetic properties of SrRuO3 and (La0.67Sr0.33)MnO3 thin films on Ba(Ti0.925Zr0.075)O3 substrates. The dielectric constant and thermal expansion of Ba(Ti0.925Zr 0.075)O3 exhibited hysteretic jumps at the structural transition temperatures. Near the rhombohedral to orthorhombic structural transition temperature of Ba(Ti0.925Zr0.075)O3, which occurs at ∼33 C, we have observed a drastic jump of resistivity and magnetization of the thin films. These results suggest that epitaxial perovskite oxide thin films on Ba(Ti0.925Zr0.075)O3 substrates should be quite useful for the strain-induced changes of physical properties near room temperature.

Original languageEnglish
Pages (from-to)251-253
Number of pages3
JournalCurrent Applied Physics
Volume14
Issue number3
DOIs
StatePublished - Mar 2014

Bibliographical note

Funding Information:
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology ( 2012R1A1A2002536 ). Part of this study has been performed using facilities at IBS Center for Correlated Electron Systems, Seoul National University.

Keywords

  • Electric property
  • Magnetic property
  • Thermal expansion-induced strain
  • Thin film

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