Epitaxial La0.67(Sr,Ca)0.33MnO3 films on Si for IR bolometer applications

A. M. Grishin; S. I. Khartsev; J. H. Kim; Jun Lu

doi:10.1557/proc-811-e.3.2

Epitaxial La_0.67(Sr,Ca)_0.33MnO₃ films on Si for IR bolometer applications

A. M. Grishin, S. I. Khartsev, J. H. Kim, Jun Lu

Research output: Contribution to journal › Conference article › peer-review

Abstract

We report on processing and properties of La_0.67(Sr,Ca) _0.33MnO₃ (LSCMO) films grown by pulsed laser deposition technique on Si(001) substrates buffered with Bi₄Ti₃O ₁₂/CeO₂/YSZ heteroepitaxial layers. X-ray diffraction shows cube-on-cube growth of epitaxial Bi₄Ti₃O _12/CeO₂/YSZ/Si heterostructure whereas the LSCMO layer grows in the "diagonal-on-side" manner onto the Bi₄Ti ₃O₁₂ (BTO) template. High resolution TEM images demonstrate sharp interfaces between the buffer layers and LSCMO film as well as rare misfit dislocations on the CeO₂/YSZ interface. LSCMO film processing conditions have been optimized to get maximum temperature coefficient of resistivity TCR = 4.4%K^-1 and colossal magnetoresistance (CMR) Δρ/ρ ∼ 2.9%kOe^-1 @ 294K. Almost ultimate CMR performance at room temperature has been achieved due to successive improvement of c-axis orientation of layers: full widths at half-maximum (FWHM) 0.65, 0.58, 0.65, 1.13 and 0.18 degrees in LSCMO/BTO/CeO₂/YSZ/Si stack, respectively. Characterization of electrical noise in CMR film yields noise equivalent temperature difference (NETD) as low as 1.2 μKA/√Hz @ 30Hz and 294K.

Original language	English
Pages (from-to)	405-410
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	811
DOIs	https://doi.org/10.1557/proc-811-e.3.2
State	Published - 2004
Externally published	Yes
Event	Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States Duration: 13 Apr 2004 → 16 Apr 2004

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title = "Epitaxial La0.67(Sr,Ca)0.33MnO3 films on Si for IR bolometer applications",

abstract = "We report on processing and properties of La0.67(Sr,Ca) 0.33MnO3 (LSCMO) films grown by pulsed laser deposition technique on Si(001) substrates buffered with Bi4Ti3O 12/CeO2/YSZ heteroepitaxial layers. X-ray diffraction shows cube-on-cube growth of epitaxial Bi4Ti3O 12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the {"}diagonal-on-side{"} manner onto the Bi4Ti 3O12 (BTO) template. High resolution TEM images demonstrate sharp interfaces between the buffer layers and LSCMO film as well as rare misfit dislocations on the CeO2/YSZ interface. LSCMO film processing conditions have been optimized to get maximum temperature coefficient of resistivity TCR = 4.4%K-1 and colossal magnetoresistance (CMR) Δρ/ρ ∼ 2.9%kOe-1 @ 294K. Almost ultimate CMR performance at room temperature has been achieved due to successive improvement of c-axis orientation of layers: full widths at half-maximum (FWHM) 0.65, 0.58, 0.65, 1.13 and 0.18 degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. Characterization of electrical noise in CMR film yields noise equivalent temperature difference (NETD) as low as 1.2 μKA/√Hz @ 30Hz and 294K.",

author = "Grishin, {A. M.} and Khartsev, {S. I.} and Kim, {J. H.} and Jun Lu",

year = "2004",

doi = "10.1557/proc-811-e.3.2",

language = "English",

volume = "811",

pages = "405--410",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions ; Conference date: 13-04-2004 Through 16-04-2004",

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TY - JOUR

T1 - Epitaxial La0.67(Sr,Ca)0.33MnO3 films on Si for IR bolometer applications

AU - Grishin, A. M.

AU - Khartsev, S. I.

AU - Kim, J. H.

AU - Lu, Jun

PY - 2004

Y1 - 2004

N2 - We report on processing and properties of La0.67(Sr,Ca) 0.33MnO3 (LSCMO) films grown by pulsed laser deposition technique on Si(001) substrates buffered with Bi4Ti3O 12/CeO2/YSZ heteroepitaxial layers. X-ray diffraction shows cube-on-cube growth of epitaxial Bi4Ti3O 12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the "diagonal-on-side" manner onto the Bi4Ti 3O12 (BTO) template. High resolution TEM images demonstrate sharp interfaces between the buffer layers and LSCMO film as well as rare misfit dislocations on the CeO2/YSZ interface. LSCMO film processing conditions have been optimized to get maximum temperature coefficient of resistivity TCR = 4.4%K-1 and colossal magnetoresistance (CMR) Δρ/ρ ∼ 2.9%kOe-1 @ 294K. Almost ultimate CMR performance at room temperature has been achieved due to successive improvement of c-axis orientation of layers: full widths at half-maximum (FWHM) 0.65, 0.58, 0.65, 1.13 and 0.18 degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. Characterization of electrical noise in CMR film yields noise equivalent temperature difference (NETD) as low as 1.2 μKA/√Hz @ 30Hz and 294K.

AB - We report on processing and properties of La0.67(Sr,Ca) 0.33MnO3 (LSCMO) films grown by pulsed laser deposition technique on Si(001) substrates buffered with Bi4Ti3O 12/CeO2/YSZ heteroepitaxial layers. X-ray diffraction shows cube-on-cube growth of epitaxial Bi4Ti3O 12/CeO2/YSZ/Si heterostructure whereas the LSCMO layer grows in the "diagonal-on-side" manner onto the Bi4Ti 3O12 (BTO) template. High resolution TEM images demonstrate sharp interfaces between the buffer layers and LSCMO film as well as rare misfit dislocations on the CeO2/YSZ interface. LSCMO film processing conditions have been optimized to get maximum temperature coefficient of resistivity TCR = 4.4%K-1 and colossal magnetoresistance (CMR) Δρ/ρ ∼ 2.9%kOe-1 @ 294K. Almost ultimate CMR performance at room temperature has been achieved due to successive improvement of c-axis orientation of layers: full widths at half-maximum (FWHM) 0.65, 0.58, 0.65, 1.13 and 0.18 degrees in LSCMO/BTO/CeO2/YSZ/Si stack, respectively. Characterization of electrical noise in CMR film yields noise equivalent temperature difference (NETD) as low as 1.2 μKA/√Hz @ 30Hz and 294K.

UR - http://www.scopus.com/inward/record.url?scp=12744259367&partnerID=8YFLogxK

U2 - 10.1557/proc-811-e.3.2

DO - 10.1557/proc-811-e.3.2

M3 - Conference article

AN - SCOPUS:12744259367

SN - 0272-9172

VL - 811

SP - 405

EP - 410

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

T2 - Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions

Y2 - 13 April 2004 through 16 April 2004

ER -

Epitaxial La_0.67(Sr,Ca)_0.33MnO₃ films on Si for IR bolometer applications

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