Abstract
The role of lateral interconnections between three-dimensional pentacene islands on low surface energy polyimide gate dielectrics was investigated by the measurement of the surface coverage dependence of the charge mobility and the use of conducting-probe atomic force microscopy (CP-AFM). From the correlation between the electrical characteristics and the morphological evolution of the three-dimensionally grown pentacene films-based field-effect transistors, we found that during film growth, the formation of interconnections between the three-dimensional pentacene islands that are isolated at the early stage contributes significantly to the enhancement process of charge mobility. The CP-AFM current mapping images of the pentacene films also indicate that the lateral interconnections play an important role in the formation of good electrical percolation pathways between the three-dimensional pentacene islands.
Original language | English |
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Pages (from-to) | 20302-20307 |
Number of pages | 6 |
Journal | Journal of Physical Chemistry B |
Volume | 110 |
Issue number | 41 |
DOIs | |
State | Published - 19 Oct 2006 |
Externally published | Yes |