Electroless gold plating on aluminum patterned chips for CMOS-based sensor applications

We presented an approach for the activation of aluminum (Al) alloy using palladium (Pd) and the subsequent gold (Au) electroless plating (ELP) for complementary metal oxide semiconductor (CMOS)-based sensor applications. In this study, CMOS process compatible Al patterned chips were used as substrates for easy incorporation with existing CMOS circuits. To improve the contact resistance that arose from the Schottky barrier between the metal electrodes and the single-walled carbon nanotubes (SWCNTs), electroless deposition of gold that has a higher work function than Al was adopted because the SWCNTs has p-type semiconductor properties. Each step of the Au ELP procedure was studied under various bath temperatures, immersion times, and chemical concentrations. Fine Pd particles were homogeneously distributed on the Al surface by the Pd activation process at room temperature. Au ELP allowed selective deposition of the Au film on the activated Al surface only. The SWCNT networks formed on the Au plated chip by a dip-coating method showed improved contact resistance and resistance variation between the Au electrode and SWCNTs. We also tried SWCNT decoration with the Au particle using the upper Au ELP method, which was expected to be applied in various areas including field-effect transistors and sensor devices.