@inproceedings{931d1d22c9234b5981db375f25c25997,
title = "Electrical instability in high-k gate stacks: As-grown vs. generated defects",
abstract = "Stress-induced changes in the high-k gate stack electrical characteristics may originate in both the Hf-based dielectric film and the SiO2-like interfacial layer, in which instability could be induced by different mechanisms. In this work, we focus on the contributions from as-grown defects and defect precursors in each of these layers, as well as stress-generated defects, under low and high voltage stress regimes. Physical data, consistent with ab initio calculations, is presented in support of proposed theoretical explanations for the mechanisms that give rise to electrical performance.",
author = "Gennadi Bersuker and Patrick Lysaght and Rino Choi",
year = "2007",
doi = "10.1149/1.2728828",
language = "English",
isbn = "9781566775526",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "687--702",
booktitle = "ECS Transactions - Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics",
edition = "3",
note = "Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films, and Emerging Dielectrics - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",
}