Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

Han Youl Ryu; Jong Moo Lee

doi:10.1063/1.4804382

Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

Han Youl Ryu, Jong Moo Lee

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

Original language	English
Article number	181115
Journal	Applied Physics Letters
Volume	102
Issue number	18
DOIs	https://doi.org/10.1063/1.4804382
State	Published - 6 May 2013

Bibliographical note

Funding Information:
This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2012R1A1A2039630) and by the MSIP (Ministry of Science, ICT&Future Planning), Korea, under the C-ITRC (Convergence Information Technology Research Center) support program (NIPA-2013-H0301-13-1010) supervised by the NIPA (National IT Industry Promotion Agency).

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title = "Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers",

abstract = "A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.",

author = "Ryu, {Han Youl} and Lee, {Jong Moo}",

note = "Funding Information: This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2012R1A1A2039630) and by the MSIP (Ministry of Science, ICT&Future Planning), Korea, under the C-ITRC (Convergence Information Technology Research Center) support program (NIPA-2013-H0301-13-1010) supervised by the NIPA (National IT Industry Promotion Agency).",

year = "2013",

month = may,

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doi = "10.1063/1.4804382",

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journal = "Applied Physics Letters",

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AU - Ryu, Han Youl

AU - Lee, Jong Moo

N1 - Funding Information: This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2012R1A1A2039630) and by the MSIP (Ministry of Science, ICT&Future Planning), Korea, under the C-ITRC (Convergence Information Technology Research Center) support program (NIPA-2013-H0301-13-1010) supervised by the NIPA (National IT Industry Promotion Agency).

PY - 2013/5/6

Y1 - 2013/5/6

N2 - A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

AB - A light-emitting diode (LED) structure containing p-type GaN layers with two-step Mg doping profiles is proposed to achieve high-efficiency performance in InGaN-based blue LEDs without any AlGaN electron-blocking-layer structures. Photoluminescence and electroluminescence (EL) measurement results show that, as the hole concentration in the p-GaN interlayer between active region and the p-GaN layer increases, defect-related nonradiative recombination increases, while the electron current leakage decreases. Under a certain hole-concentration condition in the p-GaN interlayer, the electron leakage and active region degradation are optimized so that high EL efficiency can be achieved. The measured efficiency characteristics are analyzed and interpreted using numerical simulations.

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Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers

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