Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films

Il Soo Kim; Sang Hun Jeong; Sang Sub Kim; Byung Teak Lee

doi:10.1109/ISCS.2003.1239935

Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films

Il Soo Kim, Sang Hun Jeong, Sang Sub Kim, Byung Teak Lee

Chonnam National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Results of detailed characterization indicate that the PL emission and the microstructure of ZnO/Si films grown by RF magnetron sputtering are significantly improved by increasing growth temperature and inserting low temperature buffer layer.

Original language	English
Title of host publication	2003 International Symposium on Compound Semiconductors, ISCS 2003
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	119-120
Number of pages	2
ISBN (Electronic)	0780378202
DOIs	https://doi.org/10.1109/ISCS.2003.1239935
State	Published - 2003
Externally published	Yes
Event	2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: 25 Aug 2003 → 27 Aug 2003

Publication series

Name	IEEE International Symposium on Compound Semiconductors, Proceedings
Volume	2003-January

Conference

Conference	2003 International Symposium on Compound Semiconductors, ISCS 2003
Country/Territory	United States
City	San Diego
Period	25/08/03 → 27/08/03

Bibliographical note

Publisher Copyright:
© 2003 IEEE.

Keywords

Buffer layers
Crystallization
Excitons
Microstructure
Radio frequency
Scanning electron microscopy
Semiconductor films
Sputtering
Temperature
Zinc oxide

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10.1109/ISCS.2003.1239935

Cite this

Kim, I. S., Jeong, S. H., Kim, S. S., & Lee, B. T. (2003). Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films. In 2003 International Symposium on Compound Semiconductors, ISCS 2003 (pp. 119-120). Article 1239935 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239935

Kim, Il Soo ; Jeong, Sang Hun ; Kim, Sang Sub et al. / Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films. 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 119-120 (IEEE International Symposium on Compound Semiconductors, Proceedings).

@inproceedings{f321d16b6e4b4fc99226977f7f044031,

title = "Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films",

abstract = "Results of detailed characterization indicate that the PL emission and the microstructure of ZnO/Si films grown by RF magnetron sputtering are significantly improved by increasing growth temperature and inserting low temperature buffer layer.",

keywords = "Buffer layers, Crystallization, Excitons, Microstructure, Radio frequency, Scanning electron microscopy, Semiconductor films, Sputtering, Temperature, Zinc oxide",

author = "Kim, {Il Soo} and Jeong, {Sang Hun} and Kim, {Sang Sub} and Lee, {Byung Teak}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2003",

doi = "10.1109/ISCS.2003.1239935",

language = "English",

series = "IEEE International Symposium on Compound Semiconductors, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "119--120",

booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",

address = "United States",

}

Kim, IS, Jeong, SH, Kim, SS & Lee, BT 2003, Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films. in 2003 International Symposium on Compound Semiconductors, ISCS 2003., 1239935, IEEE International Symposium on Compound Semiconductors, Proceedings, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 119-120, 2003 International Symposium on Compound Semiconductors, ISCS 2003, San Diego, United States, 25/08/03. https://doi.org/10.1109/ISCS.2003.1239935

Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films. / Kim, Il Soo; Jeong, Sang Hun; Kim, Sang Sub et al.
2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc., 2003. p. 119-120 1239935 (IEEE International Symposium on Compound Semiconductors, Proceedings; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films

AU - Kim, Il Soo

AU - Jeong, Sang Hun

AU - Kim, Sang Sub

AU - Lee, Byung Teak

PY - 2003

Y1 - 2003

N2 - Results of detailed characterization indicate that the PL emission and the microstructure of ZnO/Si films grown by RF magnetron sputtering are significantly improved by increasing growth temperature and inserting low temperature buffer layer.

AB - Results of detailed characterization indicate that the PL emission and the microstructure of ZnO/Si films grown by RF magnetron sputtering are significantly improved by increasing growth temperature and inserting low temperature buffer layer.

KW - Buffer layers

KW - Crystallization

KW - Excitons

KW - Microstructure

KW - Radio frequency

KW - Scanning electron microscopy

KW - Semiconductor films

KW - Sputtering

KW - Temperature

KW - Zinc oxide

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U2 - 10.1109/ISCS.2003.1239935

DO - 10.1109/ISCS.2003.1239935

M3 - Conference contribution

AN - SCOPUS:84943560875

T3 - IEEE International Symposium on Compound Semiconductors, Proceedings

SP - 119

EP - 120

BT - 2003 International Symposium on Compound Semiconductors, ISCS 2003

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2003 International Symposium on Compound Semiconductors, ISCS 2003

Y2 - 25 August 2003 through 27 August 2003

ER -

Kim IS, Jeong SH, Kim SS, Lee BT. Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films. In 2003 International Symposium on Compound Semiconductors, ISCS 2003. Institute of Electrical and Electronics Engineers Inc. 2003. p. 119-120. 1239935. (IEEE International Symposium on Compound Semiconductors, Proceedings). doi: 10.1109/ISCS.2003.1239935

Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films

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Keywords

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