Effect of purcell enhancement on internal quantum efficiency of ingan green light-emitting diode structures

H. Y. Ryu, G. H. Ryu, Y. H. Choi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We theoretically investigate the modification of internal quantum efficiency (IQE) in InGaN green flip-chip LED structures as a result of the Purcell effect that is found to be quite advantageous for improving the IQE InGaN green LEDs.

Original languageEnglish
Title of host publicationFrontiers in Optics, FiO 2016
PublisherOptica Publishing Group (formerly OSA)
ISBN (Print)9781943580194
DOIs
StatePublished - 2016
EventFrontiers in Optics, FiO 2016 - Rochester, United States
Duration: 17 Oct 201621 Oct 2016

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceFrontiers in Optics, FiO 2016
Country/TerritoryUnited States
CityRochester
Period17/10/1621/10/16

Bibliographical note

Publisher Copyright:
© OSA 2016.

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