Effect of pre-existing defects on reliability assessment of high-K gate dielectrics

G. Bersuker, J. H. Sim, C. D. Young, R. Choi, P. M. Zeitzoff, G. A. Brown, B. H. Lee, R. W. Murto

Research output: Contribution to journalArticlepeer-review

70 Scopus citations

Abstract

Response of the high-k gate dielectrics to low voltage stresses was studied by probing high-k transistors with various voltage/time measurements at different temperatures. The observed dependence of the transistor threshold voltage on stress time was attributed to electron trapping at pre-existing defects in the high-k dielectric rather than stress-induced trap generation. The dominance of the contribution from the reversible electron trapping on the pre-existing defects in the low voltage stress response raises the question on the applicability of the conventional reliability assessment methodology to the high-k dielectrics.

Original languageEnglish
Pages (from-to)1509-1512
Number of pages4
JournalMicroelectronics Reliability
Volume44
Issue number9-11 SPEC. ISS.
DOIs
StatePublished - Sep 2004
Externally publishedYes

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