Effect of pre-annealing on physical and electrical properties of SrBi2Ta2O9 thin films prepared by chemical solution deposition

Chee Won Chung; Ilsub Chung

doi:10.1016/S0040-6090(99)00389-2

Effect of pre-annealing on physical and electrical properties of SrBi₂Ta₂O₉ thin films prepared by chemical solution deposition

Chee Won Chung, Ilsub Chung

Samsung

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

SrBi₂Ta₂O₉ (SBT) thin films with Bi layered-perovskite structured were formed by chemical solution deposition method. The effects of pre-annealing on physical and electrical properties of SBT thin films were investigated by employing rapid thermal annealing (RTA) and furnace annealing. SBT thin films pre-annealed by furnace after each spin-coating exhibited better surface morphology and electrical properties than those pre-annealed by RTA. The crystallization mechanisms of SBT thin films with pre-annealing by RTA and furnace were examined by X-ray diffraction (XRD) analysis and scanning electron micrograph (SEM). Finally, the optimum condition of furnace pre-annealing (700 °C for 30 min) was found to give remanent polarization (2Pr) of about 20 μC/cm², leakage current density of less than 10^-7 A/cm², and breakdown voltage of 15 V.

Original language	English
Pages (from-to)	111-117
Number of pages	7
Journal	Thin Solid Films
Volume	354
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(99)00389-2
State	Published - 8 Oct 1999
Externally published	Yes

Access to Document

10.1016/S0040-6090(99)00389-2

Cite this

@article{cd27583971ba4303aa88cc3001803452,

title = "Effect of pre-annealing on physical and electrical properties of SrBi2Ta2O9 thin films prepared by chemical solution deposition",

abstract = "SrBi2Ta2O9 (SBT) thin films with Bi layered-perovskite structured were formed by chemical solution deposition method. The effects of pre-annealing on physical and electrical properties of SBT thin films were investigated by employing rapid thermal annealing (RTA) and furnace annealing. SBT thin films pre-annealed by furnace after each spin-coating exhibited better surface morphology and electrical properties than those pre-annealed by RTA. The crystallization mechanisms of SBT thin films with pre-annealing by RTA and furnace were examined by X-ray diffraction (XRD) analysis and scanning electron micrograph (SEM). Finally, the optimum condition of furnace pre-annealing (700 °C for 30 min) was found to give remanent polarization (2Pr) of about 20 μC/cm2, leakage current density of less than 10-7 A/cm2, and breakdown voltage of 15 V.",

author = "Chung, {Chee Won} and Ilsub Chung",

year = "1999",

month = oct,

day = "8",

doi = "10.1016/S0040-6090(99)00389-2",

language = "English",

volume = "354",

pages = "111--117",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Effect of pre-annealing on physical and electrical properties of SrBi2Ta2O9 thin films prepared by chemical solution deposition

AU - Chung, Chee Won

AU - Chung, Ilsub

PY - 1999/10/8

Y1 - 1999/10/8

N2 - SrBi2Ta2O9 (SBT) thin films with Bi layered-perovskite structured were formed by chemical solution deposition method. The effects of pre-annealing on physical and electrical properties of SBT thin films were investigated by employing rapid thermal annealing (RTA) and furnace annealing. SBT thin films pre-annealed by furnace after each spin-coating exhibited better surface morphology and electrical properties than those pre-annealed by RTA. The crystallization mechanisms of SBT thin films with pre-annealing by RTA and furnace were examined by X-ray diffraction (XRD) analysis and scanning electron micrograph (SEM). Finally, the optimum condition of furnace pre-annealing (700 °C for 30 min) was found to give remanent polarization (2Pr) of about 20 μC/cm2, leakage current density of less than 10-7 A/cm2, and breakdown voltage of 15 V.

AB - SrBi2Ta2O9 (SBT) thin films with Bi layered-perovskite structured were formed by chemical solution deposition method. The effects of pre-annealing on physical and electrical properties of SBT thin films were investigated by employing rapid thermal annealing (RTA) and furnace annealing. SBT thin films pre-annealed by furnace after each spin-coating exhibited better surface morphology and electrical properties than those pre-annealed by RTA. The crystallization mechanisms of SBT thin films with pre-annealing by RTA and furnace were examined by X-ray diffraction (XRD) analysis and scanning electron micrograph (SEM). Finally, the optimum condition of furnace pre-annealing (700 °C for 30 min) was found to give remanent polarization (2Pr) of about 20 μC/cm2, leakage current density of less than 10-7 A/cm2, and breakdown voltage of 15 V.

UR - http://www.scopus.com/inward/record.url?scp=0033359635&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(99)00389-2

DO - 10.1016/S0040-6090(99)00389-2

M3 - Article

AN - SCOPUS:0033359635

SN - 0040-6090

VL - 354

SP - 111

EP - 117

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Effect of pre-annealing on physical and electrical properties of SrBi₂Ta₂O₉ thin films prepared by chemical solution deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this