Abstract
Effect of annealing temperature on characteristics of sol-gel driven ZnO thin film spin-coated on Si substrate was studied. The UV-visible transmittance of the sol decreased with the increase of the aging time and drastically reduced after 20 days aging time. Granular shape of ZnO crystallites was observed on the surface of the films annealed at 550, 650, and 750 °C, and the crystallite size increased with the increase of the annealing temperature. Consequently nodular shape of crystallites was formed upon increasing the annealing temperature to 850°C and above. The current-voltage characteristics of the Schottky diodes fabricated with ZnO thin films with various annealing temperatures were measured and analyzed. It is found that, ZnO films showed the Schottky characteristics up to 750°C annealing temperature. The Schottky diode characteristics were diminished upon increasing the annealing temperature above 850°C. XPS analysis suggested that the absence of oxygen atoms in its oxidized state in stoichiometric surrounding, might be responsible for the diminished forward current of the Schottky diode when annealed above 850°C.
| Original language | English |
|---|---|
| Pages (from-to) | 1259-1263 |
| Number of pages | 5 |
| Journal | Journal of Physics and Chemistry of Solids |
| Volume | 73 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2012 |
Keywords
- A. Semiconductors
- A. ZnO
- B. Sol-gel growth
- C. X-ray diffraction
- D. Electrical properties