TY - JOUR
T1 - Dry etching of Pt/PbZrXTi1-xO3/Pt thin ftlm capacitors in an inductively coupled plasma (ICP)
AU - Chung, Chee Won
AU - Lee, Wan In
AU - Lee, June Key
PY - 1995/11
Y1 - 1995/11
N2 - Dry etching of FbZrxTi1-xO3(PZT) and pt thin films was studied with Cl2/C2F6/Ar gas in an Inductively Coupled Plasma (ICP). The etch rates were investigated at various etching conditions including etch gas, coil RF power, DC bias, and gas pressure. For the etching of PZT film, chemical enhancement was found. Under etching conditions used in this study, the etch rate of 430 to 1500 Å/min was obtained for PZT film and the etch rate of Pt film was in die range of 120 to 1890 Å/min. Selectivity of PZT to Pt was controllable in the range of 0.32 to 6.17. For the fabrication of Pt/PZT/Pt thin film capacitors, the etching process using the conventional photolithography has been developed with high etch rates and good selectivitics for both PZT and Pt films.
AB - Dry etching of FbZrxTi1-xO3(PZT) and pt thin films was studied with Cl2/C2F6/Ar gas in an Inductively Coupled Plasma (ICP). The etch rates were investigated at various etching conditions including etch gas, coil RF power, DC bias, and gas pressure. For the etching of PZT film, chemical enhancement was found. Under etching conditions used in this study, the etch rate of 430 to 1500 Å/min was obtained for PZT film and the etch rate of Pt film was in die range of 120 to 1890 Å/min. Selectivity of PZT to Pt was controllable in the range of 0.32 to 6.17. For the fabrication of Pt/PZT/Pt thin film capacitors, the etching process using the conventional photolithography has been developed with high etch rates and good selectivitics for both PZT and Pt films.
UR - http://www.scopus.com/inward/record.url?scp=0009956854&partnerID=8YFLogxK
U2 - 10.1080/10584589508013597
DO - 10.1080/10584589508013597
M3 - Article
AN - SCOPUS:0009956854
SN - 1058-4587
VL - 11
SP - 259
EP - 267
JO - Integrated Ferroelectrics
JF - Integrated Ferroelectrics
IS - 1-4
ER -