Abstract
Preparation of p-type ZnO thin films on Al2O3 (0 0 0 1) substrates is reported, which involves two different p-type dopant source materials such as Zn3As2 and Zn3P2 for As and P doping, respectively, during pulsed laser deposition, while an ion implantation method was used to dope N in the ZnO films. The hole concentrations of 2.5×1017-1.2×1018 cm-3 have been observed in As-doped p-type ZnO films after being underwent rapid thermal annealing (RTA) at 200°C under an N2 ambient. In the case of P doping, 3 mol% P-doped ZnO films at RTA between 600 and 800°C under an O2 ambient exhibited p-type behavior with the hole concentrations of 5.1×1014-1.5×1017 cm-3. In the case of N doping, after RTA up to 700°C, films implanted with an N dose of 1×1012 ions/cm2 showed p-type conductivity with a hole concentration of ∼6.01×1017 cm-3 and a low resistivity of ∼5.2×10-1 Ω cm. The low-temperature photoluminescence results showed the peak associated with the neutral-acceptor bound exciton (A°, X) emission only in the films showing p-type behavior.
Original language | English |
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Pages (from-to) | 85-88 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 287 |
Issue number | 1 |
DOIs | |
State | Published - 18 Jan 2006 |
Externally published | Yes |
Event | Proceedings of the International Conference on Materials for Advanced Technologies (ICMAT 2005) Symposium N ZnO and Related Materials - Duration: 3 Jul 2005 → 8 Jul 2005 |
Keywords
- A1. Doping
- A1. Thermal treatment
- A3. Pulsed laser deposition
- B1. ZnO