Diameter modulation as a route to probe the vapour-liquid-solid growth kinetics of semiconductor nanowires

I. R. Musin; N. Shin; M. A. Filler

doi:10.1039/c3tc32038c

Diameter modulation as a route to probe the vapour-liquid-solid growth kinetics of semiconductor nanowires

I. R. Musin, N. Shin, M. A. Filler

Georgia Institute of Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A method is presented for interrogating the kinetics of semiconductor nanowire growth via the vapour-liquid-solid (VLS) technique. Morphological markers, generated via user-defined changes to diameter along the nanowire axial direction, enable the accurate and facile extraction of growth rate from scanning electron microscopy images. Trimethylsilane, SiH(CH₃) ₃, is utilized for this purpose and does not influence growth rate and/or kinking when introduced separately from GeH₄. As a proof of concept, we apply this approach to determine the diameter, temperature, and pressure dependence of Au-catalyzed Ge nanowire growth. This journal is

Original language	English
Pages (from-to)	3285-3291
Number of pages	7
Journal	Journal of Materials Chemistry C
Volume	2
Issue number	17
DOIs	https://doi.org/10.1039/c3tc32038c
State	Published - 7 May 2014
Externally published	Yes

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abstract = "A method is presented for interrogating the kinetics of semiconductor nanowire growth via the vapour-liquid-solid (VLS) technique. Morphological markers, generated via user-defined changes to diameter along the nanowire axial direction, enable the accurate and facile extraction of growth rate from scanning electron microscopy images. Trimethylsilane, SiH(CH3) 3, is utilized for this purpose and does not influence growth rate and/or kinking when introduced separately from GeH4. As a proof of concept, we apply this approach to determine the diameter, temperature, and pressure dependence of Au-catalyzed Ge nanowire growth. This journal is",

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AB - A method is presented for interrogating the kinetics of semiconductor nanowire growth via the vapour-liquid-solid (VLS) technique. Morphological markers, generated via user-defined changes to diameter along the nanowire axial direction, enable the accurate and facile extraction of growth rate from scanning electron microscopy images. Trimethylsilane, SiH(CH3) 3, is utilized for this purpose and does not influence growth rate and/or kinking when introduced separately from GeH4. As a proof of concept, we apply this approach to determine the diameter, temperature, and pressure dependence of Au-catalyzed Ge nanowire growth. This journal is

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Diameter modulation as a route to probe the vapour-liquid-solid growth kinetics of semiconductor nanowires

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