Design of a Pre-Distortion Power Amplifier for Ku-Band/5G Applications

Chung Ching Lin, Ahmed Alzahmi, Nahid Mirzaie, Gyung Su Byun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A 15 GHz power amplifier design for 5G applications is presented in this paper. The proposed power amplifier consists in a three-stage architecture. A low complex pre-distortion circuit is designed as the first stage. Since the CMOS process suffers from poor intrinsic gain (gm∗ro), especially in the millimeter wave band, the Darlington pair driver stage is exploited to maximize the power gain. A FET-stack structure is used to enable high voltage operation and thus increase the output power. The proposed power amplifier is designed and simulated in a standard 130nm CMOS process. The simulation results show that the proposed power amplifier can attain 1dB compression point (P1dB) of 18.9 dBm with a power added efficiency (PAE) of 26% under 3.6 V and 1.8 V dual voltage supply.

Original languageEnglish
Title of host publication2018 IEEE International Conference on Electro/Information Technology, EIT 2018
PublisherIEEE Computer Society
Pages808-811
Number of pages4
ISBN (Electronic)9781538653982
DOIs
StatePublished - 18 Oct 2018
Event2018 IEEE International Conference on Electro/Information Technology, EIT 2018 - Rochester, United States
Duration: 3 May 20185 May 2018

Publication series

NameIEEE International Conference on Electro Information Technology
Volume2018-May
ISSN (Print)2154-0357
ISSN (Electronic)2154-0373

Conference

Conference2018 IEEE International Conference on Electro/Information Technology, EIT 2018
Country/TerritoryUnited States
CityRochester
Period3/05/185/05/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

  • 5G communication
  • CMOS
  • Darlington pair
  • Ku band
  • Millimeter wave
  • Power amplifier
  • Pre-distortion technique

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