Current suppressed self-compliance characteristics of oxygen rich TiOyinserted Al2O3/TiOxbased RRAM

Sungjoon Kim; Tae Hyeon Kim; Hyungjin Kim; Byung Gook Park

doi:10.1063/5.0027757

Current suppressed self-compliance characteristics of oxygen rich TiO_yinserted Al₂O₃/TiO_xbased RRAM

Sungjoon Kim, Tae Hyeon Kim, Hyungjin Kim, Byung Gook Park

Seoul National University

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Although many studies have been continuously conducted to reduce the power consumption of a resistive random access memory (RRAM) cross-point array with the current-compliance effect, it has been difficult yet to realize intrinsic self-compliance effects in an RRAM device itself. In this study, a simple oxygen-rich TiOy layer is inserted into the Al2O3/TiOx-based RRAM stack as a current suppression layer, and XPS analysis is provided to compare the stoichiometry of the TiOx and TiOy layers. A self-compliance region is formed between the different breakdown voltages of Al2O3 and TiOy layers, and a relatively thinner current path is formed in the Al2O3 layer than a device without the TiOy layer and the overall current level is significantly decreased since the TiOy layer limits the overshoot current.

Original language	English
Article number	202106
Journal	Applied Physics Letters
Volume	117
Issue number	20
DOIs	https://doi.org/10.1063/5.0027757
State	Published - 16 Nov 2020

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title = "Current suppressed self-compliance characteristics of oxygen rich TiOyinserted Al2O3/TiOxbased RRAM",

abstract = "Although many studies have been continuously conducted to reduce the power consumption of a resistive random access memory (RRAM) cross-point array with the current-compliance effect, it has been difficult yet to realize intrinsic self-compliance effects in an RRAM device itself. In this study, a simple oxygen-rich TiOy layer is inserted into the Al2O3/TiOx-based RRAM stack as a current suppression layer, and XPS analysis is provided to compare the stoichiometry of the TiOx and TiOy layers. A self-compliance region is formed between the different breakdown voltages of Al2O3 and TiOy layers, and a relatively thinner current path is formed in the Al2O3 layer than a device without the TiOy layer and the overall current level is significantly decreased since the TiOy layer limits the overshoot current.",

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AU - Kim, Sungjoon

AU - Kim, Tae Hyeon

AU - Kim, Hyungjin

AU - Park, Byung Gook

PY - 2020/11/16

Y1 - 2020/11/16

N2 - Although many studies have been continuously conducted to reduce the power consumption of a resistive random access memory (RRAM) cross-point array with the current-compliance effect, it has been difficult yet to realize intrinsic self-compliance effects in an RRAM device itself. In this study, a simple oxygen-rich TiOy layer is inserted into the Al2O3/TiOx-based RRAM stack as a current suppression layer, and XPS analysis is provided to compare the stoichiometry of the TiOx and TiOy layers. A self-compliance region is formed between the different breakdown voltages of Al2O3 and TiOy layers, and a relatively thinner current path is formed in the Al2O3 layer than a device without the TiOy layer and the overall current level is significantly decreased since the TiOy layer limits the overshoot current.

AB - Although many studies have been continuously conducted to reduce the power consumption of a resistive random access memory (RRAM) cross-point array with the current-compliance effect, it has been difficult yet to realize intrinsic self-compliance effects in an RRAM device itself. In this study, a simple oxygen-rich TiOy layer is inserted into the Al2O3/TiOx-based RRAM stack as a current suppression layer, and XPS analysis is provided to compare the stoichiometry of the TiOx and TiOy layers. A self-compliance region is formed between the different breakdown voltages of Al2O3 and TiOy layers, and a relatively thinner current path is formed in the Al2O3 layer than a device without the TiOy layer and the overall current level is significantly decreased since the TiOy layer limits the overshoot current.

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Current suppressed self-compliance characteristics of oxygen rich TiO_yinserted Al₂O₃/TiO_xbased RRAM

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