Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

R. R. Bahabry; A. Gumus; A. T. Kutbee; N. Wehbe; S. M. Ahmed; M. T. Ghoneim; K. T. Lee; J. A. Rogers; M. M. Hussain

doi:10.1109/PVSC.2016.7749668

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

R. R. Bahabry, A. Gumus, A. T. Kutbee, N. Wehbe, S. M. Ahmed, M. T. Ghoneim, K. T. Lee, J. A. Rogers, M. M. Hussain

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm² enhancement in the short circuit current (J_sc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	602-605
Number of pages	4
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749668
State	Published - 18 Nov 2016
Externally published	Yes
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

CMOS
Contact engineering
crystlaine silcon photovoltaic
nickel silicide
screen printed silver

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2016.7749668

Cite this

Bahabry, R. R., Gumus, A., Kutbee, A. T., Wehbe, N., Ahmed, S. M., Ghoneim, M. T., Lee, K. T., Rogers, J. A., & Hussain, M. M. (2016). Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 602-605). Article 7749668 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749668

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title = "Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact",

abstract = "We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.",

keywords = "CMOS, Contact engineering, crystlaine silcon photovoltaic, nickel silicide, screen printed silver",

author = "Bahabry, {R. R.} and A. Gumus and Kutbee, {A. T.} and N. Wehbe and Ahmed, {S. M.} and Ghoneim, {M. T.} and Lee, {K. T.} and Rogers, {J. A.} and Hussain, {M. M.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7749668",

language = "English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "602--605",

booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",

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}

Bahabry, RR, Gumus, A, Kutbee, AT, Wehbe, N, Ahmed, SM, Ghoneim, MT, Lee, KT, Rogers, JA & Hussain, MM 2016, Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749668, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 602-605, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749668

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. / Bahabry, R. R.; Gumus, A.; Kutbee, A. T. et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 602-605 7749668 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Bahabry, R. R.

AU - Gumus, A.

AU - Kutbee, A. T.

AU - Wehbe, N.

AU - Ahmed, S. M.

AU - Ghoneim, M. T.

AU - Lee, K. T.

AU - Rogers, J. A.

AU - Hussain, M. M.

PY - 2016/11/18

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N2 - We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

AB - We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

KW - CMOS

KW - Contact engineering

KW - crystlaine silcon photovoltaic

KW - nickel silicide

KW - screen printed silver

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ER -

Bahabry RR, Gumus A, Kutbee AT, Wehbe N, Ahmed SM, Ghoneim MT et al. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 602-605. 7749668. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749668

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

Abstract

Publication series

Conference

Bibliographical note

Keywords

UN SDGs

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