Abstract
We study the effect of thermal annealing conditions (up to 400°C) and atmospheres (air, Arand O2) on a newly developed nanochannel tin-oxide structure. The nanochanneled structures were prepared by self-organized anodization of metallic tin. Thermal annealing conditions have a strong impact on the crystallinity and content of Sn2+ defects present in the structure, and thus have a strong influence on the photoresponse characteristics of the films. Photocurrent measurements show that films annealed at 200°C in Ar atmosphere exhibit a band gap as low as 2.4eV and a photoresponse in the visible range. This effect is ascribed to a large content of Sn2+ defects in the structure and the improved crystallinity of the films annealed at this temperature. On the contrary, the Sn2+ content is decreased when annealing at 400°C under aerobic conditions, which correlates with a shift in the film band gap to 3.2eV, closer to the reported value for pure SnO2 (3.6eV).
Original language | English |
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Pages (from-to) | 1133-1137 |
Number of pages | 5 |
Journal | ChemElectroChem |
Volume | 1 |
Issue number | 7 |
DOIs | |
State | Published - 1 Jul 2014 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Keywords
- Annealing
- Doping
- Nanostructures
- Self-organizing anodization
- Tin oxide