Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates

K. S. Jeon; J. H. Sung; M. W. Lee; H. Y. Song; E. A. Lee; S. O. Kim; H. J. Choi; H. Y. Shin; W. H. Park; Y. I. Jang; M. G. Kang; Y. H. Choi; J. S. Lee; D. H. Ko; H. Y. Ryu

doi:10.1166/jnn.2015.10408

Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates

K. S. Jeon, J. H. Sung, M. W. Lee, H. Y. Song, E. A. Lee, S. O. Kim, H. J. Choi, H. Y. Shin, W. H. Park, Y. I. Jang, M. G. Kang, Y. H. Choi, J. S. Lee, D. H. Ko, H. Y. Ryu

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Abstract

We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. The strain characteristics are investigated using micro-Raman spectroscopy and high-resolution transmission electron microscopy. These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.

Original language	English
Pages (from-to)	5264-5266
Number of pages	3
Journal	Journal of Nanoscience and Nanotechnology
Volume	15
Issue number	7
DOIs	https://doi.org/10.1166/jnn.2015.10408
State	Published - 1 Jul 2015

Bibliographical note

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Copyright © 2015 American Scientific Publishers All rights reserved.

Keywords

GaN
Light-Emitting Diode
Silicon Substrate

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10.1166/jnn.2015.10408

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Jeon, K. S., Sung, J. H., Lee, M. W., Song, H. Y., Lee, E. A., Kim, S. O., Choi, H. J., Shin, H. Y., Park, W. H., Jang, Y. I., Kang, M. G., Choi, Y. H., Lee, J. S., Ko, D. H., & Ryu, H. Y. (2015). Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates. Journal of Nanoscience and Nanotechnology, 15(7), 5264-5266. https://doi.org/10.1166/jnn.2015.10408

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title = "Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates",

abstract = "We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. The strain characteristics are investigated using micro-Raman spectroscopy and high-resolution transmission electron microscopy. These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.",

keywords = "GaN, Light-Emitting Diode, Silicon Substrate",

author = "Jeon, {K. S.} and Sung, {J. H.} and Lee, {M. W.} and Song, {H. Y.} and Lee, {E. A.} and Kim, {S. O.} and Choi, {H. J.} and Shin, {H. Y.} and Park, {W. H.} and Jang, {Y. I.} and Kang, {M. G.} and Choi, {Y. H.} and Lee, {J. S.} and Ko, {D. H.} and Ryu, {H. Y.}",

year = "2015",

month = jul,

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doi = "10.1166/jnn.2015.10408",

language = "English",

volume = "15",

pages = "5264--5266",

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Jeon, KS, Sung, JH, Lee, MW, Song, HY, Lee, EA, Kim, SO, Choi, HJ, Shin, HY, Park, WH, Jang, YI, Kang, MG, Choi, YH, Lee, JS, Ko, DH & Ryu, HY 2015, 'Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates', Journal of Nanoscience and Nanotechnology, vol. 15, no. 7, pp. 5264-5266. https://doi.org/10.1166/jnn.2015.10408

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T1 - Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates

AU - Jeon, K. S.

AU - Sung, J. H.

AU - Lee, M. W.

AU - Song, H. Y.

AU - Lee, E. A.

AU - Kim, S. O.

AU - Choi, H. J.

AU - Shin, H. Y.

AU - Park, W. H.

AU - Jang, Y. I.

AU - Kang, M. G.

AU - Choi, Y. H.

AU - Lee, J. S.

AU - Ko, D. H.

AU - Ryu, H. Y.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. The strain characteristics are investigated using micro-Raman spectroscopy and high-resolution transmission electron microscopy. These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.

AB - We compare the strain states and device performances of GaN-based blue light-emitting diodes (LEDs) grown on Si(111) and sapphire substrates. The strain characteristics are investigated using micro-Raman spectroscopy and high-resolution transmission electron microscopy. These analyses reveal that GaN layer grown on Si has a residual tensile strain in contrast to a compressive strain for GaN on sapphire, and quantum wells (QWs) on GaN/Si experience reduced lattice mismatch than those of GaN/sapphire. When external quantum efficiencies of LED on sapphire and Si substrates are compared, the LED on Si shows better efficiency droop characteristics and this is attributed to a decrease in piezo-electric field strength in InGaN/GaN layers owing to reduced lattice mismatch.

KW - GaN

KW - Light-Emitting Diode

KW - Silicon Substrate

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Comparison of strain in GaN-based blue light-emitting diode grown on Silicon(111) and sapphire substrates

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Keywords

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