Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n -cladding layer

H. Y. Ryu; K. H. Ha; J. K. Son; H. S. Paek; Y. J. Sung; K. S. Kim; H. K. Kim; Y. Park; S. N. Lee; O. H. Nam

doi:10.1063/1.3126487

Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n -cladding layer

H. Y. Ryu, K. H. Ha, J. K. Son, H. S. Paek, Y. J. Sung, K. S. Kim, H. K. Kim, Y. Park, S. N. Lee, O. H. Nam

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Abstract

The output power of InGaN multiple-quantum-well laser diodes (LDs) emitting at 405 nm wavelength is compared for several Al composition in the AlGaN n -cladding layer. The Al composition has been varied from 2% to 6% to study the effect of n -cladding refractive index on threshold current and slope efficiency of the LDs. As the Al composition in the AlGaN n -cladding layer increases, both threshold current and slope efficiency decrease. This behavior can be explained by the change in optical field distribution with refractive index of the AlGaN n -cladding layer. It is found that the Al composition of ≤4% would be advantageous for achieving more than 100 mW output power and high level of catastrophic optical damage.

Original language	English
Article number	103102
Journal	Journal of Applied Physics
Volume	105
Issue number	10
DOIs	https://doi.org/10.1063/1.3126487
State	Published - 2009

Bibliographical note

Funding Information:
This work was supported by INHA UNIVERSITY Research Grant (INHA-37457).

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@article{22474af53f184fc99198543854ba3e83,

title = "Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n -cladding layer",

abstract = "The output power of InGaN multiple-quantum-well laser diodes (LDs) emitting at 405 nm wavelength is compared for several Al composition in the AlGaN n -cladding layer. The Al composition has been varied from 2% to 6% to study the effect of n -cladding refractive index on threshold current and slope efficiency of the LDs. As the Al composition in the AlGaN n -cladding layer increases, both threshold current and slope efficiency decrease. This behavior can be explained by the change in optical field distribution with refractive index of the AlGaN n -cladding layer. It is found that the Al composition of ≤4% would be advantageous for achieving more than 100 mW output power and high level of catastrophic optical damage.",

author = "Ryu, {H. Y.} and Ha, {K. H.} and Son, {J. K.} and Paek, {H. S.} and Sung, {Y. J.} and Kim, {K. S.} and Kim, {H. K.} and Y. Park and Lee, {S. N.} and Nam, {O. H.}",

note = "Funding Information: This work was supported by INHA UNIVERSITY Research Grant (INHA-37457).",

year = "2009",

doi = "10.1063/1.3126487",

language = "English",

volume = "105",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

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TY - JOUR

T1 - Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n -cladding layer

AU - Ryu, H. Y.

AU - Ha, K. H.

AU - Son, J. K.

AU - Paek, H. S.

AU - Sung, Y. J.

AU - Kim, K. S.

AU - Kim, H. K.

AU - Park, Y.

AU - Lee, S. N.

AU - Nam, O. H.

N1 - Funding Information: This work was supported by INHA UNIVERSITY Research Grant (INHA-37457).

PY - 2009

Y1 - 2009

N2 - The output power of InGaN multiple-quantum-well laser diodes (LDs) emitting at 405 nm wavelength is compared for several Al composition in the AlGaN n -cladding layer. The Al composition has been varied from 2% to 6% to study the effect of n -cladding refractive index on threshold current and slope efficiency of the LDs. As the Al composition in the AlGaN n -cladding layer increases, both threshold current and slope efficiency decrease. This behavior can be explained by the change in optical field distribution with refractive index of the AlGaN n -cladding layer. It is found that the Al composition of ≤4% would be advantageous for achieving more than 100 mW output power and high level of catastrophic optical damage.

AB - The output power of InGaN multiple-quantum-well laser diodes (LDs) emitting at 405 nm wavelength is compared for several Al composition in the AlGaN n -cladding layer. The Al composition has been varied from 2% to 6% to study the effect of n -cladding refractive index on threshold current and slope efficiency of the LDs. As the Al composition in the AlGaN n -cladding layer increases, both threshold current and slope efficiency decrease. This behavior can be explained by the change in optical field distribution with refractive index of the AlGaN n -cladding layer. It is found that the Al composition of ≤4% would be advantageous for achieving more than 100 mW output power and high level of catastrophic optical damage.

UR - http://www.scopus.com/inward/record.url?scp=66549128356&partnerID=8YFLogxK

U2 - 10.1063/1.3126487

DO - 10.1063/1.3126487

M3 - Article

AN - SCOPUS:66549128356

SN - 0021-8979

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 103102

ER -

Comparison of output power of InGaN laser diodes for different Al compositions in the AlGaN n -cladding layer

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