Capacitor-Based Synaptic Devices for Hardware Spiking Neural Networks

Sungmin Hwang, Junsu Yu, Geun Ho Lee, Min Suk Song, Jeesoo Chang, Kyung Kyu Min, Taejin Jang, Jong Ho Lee, Byung Gook Park, Hyungjin Kim

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

In this work, we present a hardware neural network with capacitor-based synaptic devices. A capacitor-based synaptic device was developed using a MOS capacitor structure with a charge trapping layer. Due to the flat band voltage shift by charge trapping and its non-linear {C} - {V} characteristics, multilevel weight values could be implemented by the charge occurring when charging and discharging the capacitor. The vector-matrix multiplication (VMM) function was also experimentally verified using a fabricated synapse array based on NAND flash structure.

Original languageEnglish
Pages (from-to)549-552
Number of pages4
JournalIEEE Electron Device Letters
Volume43
Issue number4
DOIs
StatePublished - 1 Apr 2022

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

  • Capacitor-based synaptic device
  • MOS capacitor
  • NAND flash memory
  • capacitive neural network
  • neuromorphic system
  • spiking neural network (SNN)

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