Bipolar resistance switching and photocurrent in a BaTiO 3-δ thin film

Y. A. Park; K. D. Sung; C. J. Won; J. H. Jung; N. Hur

doi:10.1063/1.4819800

Bipolar resistance switching and photocurrent in a BaTiO _3-δ thin film

Y. A. Park, K. D. Sung, C. J. Won, J. H. Jung, N. Hur

Inha University

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

The leakage current in ferroelectric materials has been considered as a problem to be overcome in ferroelectric memory applications. However, recent studies on the polarization-dependent diode effect and the photocurrent in lossy ferroelectric materials suggest the possibility of using this leakage current for a different type of resistive memory. Along this route, we investigated the resistance-switching effect in SrRuO₃/BaTiO_3-δ/ SrRuO₃ thin film capacitors. We observed the bipolar resistance switching and the switchable photocurrent, both of which were tuned by the different electric poling. Our finding may suggest an alternative type of nonvolatile ferroelectric memory capable of nondestructive readout.

Original language	English
Article number	094101
Journal	Journal of Applied Physics
Volume	114
Issue number	9
DOIs	https://doi.org/10.1063/1.4819800
State	Published - 7 Sep 2013

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0026762).

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abstract = "The leakage current in ferroelectric materials has been considered as a problem to be overcome in ferroelectric memory applications. However, recent studies on the polarization-dependent diode effect and the photocurrent in lossy ferroelectric materials suggest the possibility of using this leakage current for a different type of resistive memory. Along this route, we investigated the resistance-switching effect in SrRuO3/BaTiO3-δ/ SrRuO3 thin film capacitors. We observed the bipolar resistance switching and the switchable photocurrent, both of which were tuned by the different electric poling. Our finding may suggest an alternative type of nonvolatile ferroelectric memory capable of nondestructive readout.",

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AU - Jung, J. H.

AU - Hur, N.

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AB - The leakage current in ferroelectric materials has been considered as a problem to be overcome in ferroelectric memory applications. However, recent studies on the polarization-dependent diode effect and the photocurrent in lossy ferroelectric materials suggest the possibility of using this leakage current for a different type of resistive memory. Along this route, we investigated the resistance-switching effect in SrRuO3/BaTiO3-δ/ SrRuO3 thin film capacitors. We observed the bipolar resistance switching and the switchable photocurrent, both of which were tuned by the different electric poling. Our finding may suggest an alternative type of nonvolatile ferroelectric memory capable of nondestructive readout.

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Bipolar resistance switching and photocurrent in a BaTiO _3-δ thin film

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