TY - JOUR
T1 - Automated electrochemical synthesis and photoelectrochemical characterization of Zn1-xCoxO thin films for solar hydrogen production
AU - Jaramillo, Thomas F.
AU - Baeck, Sung Hyeon
AU - Kleiman-Shwarsctein, Alan
AU - Choi, Kyoung Shin
AU - Stucky, Galen D.
AU - McFarland, Eric W.
PY - 2005/3
Y1 - 2005/3
N2 - High-throughput electrochemical methods have been developed for the investigation of Zn1-xCoxO films for photoelectrochemical hydrogen production from water. A library of 120 samples containing 27 different compositions (0 ≤ x ≤ 0.068) was synthesized by automated serial electrochemical deposition. High-throughput photoelectrochemical screening revealed improved solar hydrogen production for the cobaltdoped films, with Zn0.956Co0.044O exhibiting a 4-fold improvement over pure ZnO with no external bias. Flat-band potential, bias-dependent photocurrent, and action spectra were also measured automatically with the high-throughput screening system. The 200-nm-thick films were subsequently characterized by numerous techniques, including SEM, XRD, XPS, and UV-vis, which show that the depositions are well-controlled. Zn/Co stoichiometry in the films was controlled by the ratio of the Zn and Co precursors in each deposition bath. All films exhibited the wurtzite structure typical of pure ZnO, and the Co2+ appears to substitute Zn2+, forming a single-phase solid solution. Band gaps of the solid solutions were systematically lower than the 3.2-eV band gap typical of ZnO.
AB - High-throughput electrochemical methods have been developed for the investigation of Zn1-xCoxO films for photoelectrochemical hydrogen production from water. A library of 120 samples containing 27 different compositions (0 ≤ x ≤ 0.068) was synthesized by automated serial electrochemical deposition. High-throughput photoelectrochemical screening revealed improved solar hydrogen production for the cobaltdoped films, with Zn0.956Co0.044O exhibiting a 4-fold improvement over pure ZnO with no external bias. Flat-band potential, bias-dependent photocurrent, and action spectra were also measured automatically with the high-throughput screening system. The 200-nm-thick films were subsequently characterized by numerous techniques, including SEM, XRD, XPS, and UV-vis, which show that the depositions are well-controlled. Zn/Co stoichiometry in the films was controlled by the ratio of the Zn and Co precursors in each deposition bath. All films exhibited the wurtzite structure typical of pure ZnO, and the Co2+ appears to substitute Zn2+, forming a single-phase solid solution. Band gaps of the solid solutions were systematically lower than the 3.2-eV band gap typical of ZnO.
UR - http://www.scopus.com/inward/record.url?scp=17144387337&partnerID=8YFLogxK
U2 - 10.1021/cc049864x
DO - 10.1021/cc049864x
M3 - Article
C2 - 15762755
AN - SCOPUS:17144387337
SN - 1520-4766
VL - 7
SP - 264
EP - 271
JO - Journal of Combinatorial Chemistry
JF - Journal of Combinatorial Chemistry
IS - 2
ER -