Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

Manh Cuong Nguyen; An Hoang Thuy Nguyen; Hyungmin Ji; Jonggyu Cheon; Jin Hyun Kim; Kyoung Moon Yu; Seong Yong Cho; Sang Woo Kim; Rino Choi

doi:10.1109/TED.2018.2859224

Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

Manh Cuong Nguyen, An Hoang Thuy Nguyen, Hyungmin Ji, Jonggyu Cheon, Jin Hyun Kim, Kyoung Moon Yu, Seong Yong Cho, Sang Woo Kim, Rino Choi

Inha University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.

Original language	English
Article number	8424088
Pages (from-to)	3786-3790
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	9
DOIs	https://doi.org/10.1109/TED.2018.2859224
State	Published - Sep 2018

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

Band tail
charge pumping (CP)
conduction band edge
density of states (DOSs)
indium gallium zinc oxide (IGZO)
metal-oxide (MO)-semiconductor
oxygen vacancy
single pulse
thin-film transistor (TFT)
trap density
trap profiling

Access to Document

10.1109/TED.2018.2859224

Cite this

@article{bfeff8b61c3e4cb2bd40dee1bfc8a371,

title = "Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors",

abstract = "A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.",

keywords = "Band tail, charge pumping (CP), conduction band edge, density of states (DOSs), indium gallium zinc oxide (IGZO), metal-oxide (MO)-semiconductor, oxygen vacancy, single pulse, thin-film transistor (TFT), trap density, trap profiling",

author = "Nguyen, \{Manh Cuong\} and Nguyen, \{An Hoang Thuy\} and Hyungmin Ji and Jonggyu Cheon and Kim, \{Jin Hyun\} and Yu, \{Kyoung Moon\} and Cho, \{Seong Yong\} and Kim, \{Sang Woo\} and Rino Choi",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2018",

month = sep,

doi = "10.1109/TED.2018.2859224",

language = "English",

volume = "65",

pages = "3786--3790",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

AU - Nguyen, Manh Cuong

AU - Nguyen, An Hoang Thuy

AU - Ji, Hyungmin

AU - Cheon, Jonggyu

AU - Kim, Jin Hyun

AU - Yu, Kyoung Moon

AU - Cho, Seong Yong

AU - Kim, Sang Woo

AU - Choi, Rino

PY - 2018/9

Y1 - 2018/9

N2 - A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.

AB - A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The proposed SPCP method was demonstrated in characterizing the DOS below the conduction band of indium gallium zinc oxide TFTs. The DOSs, including oxygen vacancy donorlike states and band tail states, were characterized successfully with high resolution. This method has all the advantages of the conventional CP method and single-pulse characterization.

KW - Band tail

KW - charge pumping (CP)

KW - conduction band edge

KW - density of states (DOSs)

KW - indium gallium zinc oxide (IGZO)

KW - metal-oxide (MO)-semiconductor

KW - oxygen vacancy

KW - single pulse

KW - thin-film transistor (TFT)

KW - trap density

KW - trap profiling

UR - http://www.scopus.com/inward/record.url?scp=85050995248&partnerID=8YFLogxK

U2 - 10.1109/TED.2018.2859224

DO - 10.1109/TED.2018.2859224

M3 - Article

AN - SCOPUS:85050995248

SN - 0018-9383

VL - 65

SP - 3786

EP - 3790

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 8424088

ER -

Application of Single-Pulse Charge Pumping Method on Evaluation of Indium Gallium Zinc Oxide Thin-Film Transistors

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this