Abstract
Endurance characteristics of ferroelectric-gate field effect transistor (FeFET) memory are analyzed through DC and fast drain current (I-{D})-gate voltage (V-{G}) measurements. From the fast I-{D}-V-{G^{S}} before endurance cycling, it is revealed that acceptor-like traps with millisecond-order response time are predominantly responsible for the degradation of the device. After endurance cycling, it is found that only the SS is degraded in the program state, while the rightward threshold voltage (V-{th}) shift and the SS degradation simultaneously occur in the erase state. This behavior can be successfully explained by the emptying and filling of the trap states by program and erase pulses, respectively.
| Original language | English |
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| Title of host publication | ITC-CSCC 2022 - 37th International Technical Conference on Circuits/Systems, Computers and Communications |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 630-633 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781665485593 |
| DOIs | |
| State | Published - 2022 |
| Event | 37th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2022 - Phuket, Thailand Duration: 5 Jul 2022 → 8 Jul 2022 |
Publication series
| Name | ITC-CSCC 2022 - 37th International Technical Conference on Circuits/Systems, Computers and Communications |
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Conference
| Conference | 37th International Technical Conference on Circuits/Systems, Computers and Communications, ITC-CSCC 2022 |
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| Country/Territory | Thailand |
| City | Phuket |
| Period | 5/07/22 → 8/07/22 |
Bibliographical note
Publisher Copyright:© 2022 IEEE.
Keywords
- Ferroelectric
- hafnium zirconium oxide
- memory endurance