Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

Han Youl Ryu; Dong Soo Shin; Jong In Shim

doi:10.1063/1.3698113

Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

Han Youl Ryu, Dong Soo Shin, Jong In Shim

Hanyang University

Research output: Contribution to journal › Article › peer-review

109 Scopus citations

Abstract

In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier localization in In-rich region and inhomogeneous carrier distribution. The authors investigate the efficiency droop of InGaN-based light-emitting diodes (LEDs) based on the carrier rate equation including the influence of the reduced effective active volume. It is found that efficiency droop characteristics can be modeled well without employing a large Auger recombination coefficient by assuming that only a small portion of the QWs is effectively used as active region. The presented model is expected to provide insight into the realization of droop-free operation in nitride LEDs.

Original language	English
Article number	131109
Journal	Applied Physics Letters
Volume	100
Issue number	13
DOIs	https://doi.org/10.1063/1.3698113
State	Published - 26 Mar 2012

Bibliographical note

Funding Information:
This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2011-0003376) and the Technology Innovation Program (Industrial Strategic technology development program, 10032099, Development of commercialized technologies for performance and failure analyses of chip- or wafer-level light-emitting diodes) funded by the Ministry of Knowledge Economy (MKE, Korea).

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abstract = "In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier localization in In-rich region and inhomogeneous carrier distribution. The authors investigate the efficiency droop of InGaN-based light-emitting diodes (LEDs) based on the carrier rate equation including the influence of the reduced effective active volume. It is found that efficiency droop characteristics can be modeled well without employing a large Auger recombination coefficient by assuming that only a small portion of the QWs is effectively used as active region. The presented model is expected to provide insight into the realization of droop-free operation in nitride LEDs.",

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note = "Funding Information: This work was supported by National Research Foundation of Korea Grant funded by the Korean Government (2011-0003376) and the Technology Innovation Program (Industrial Strategic technology development program, 10032099, Development of commercialized technologies for performance and failure analyses of chip- or wafer-level light-emitting diodes) funded by the Ministry of Knowledge Economy (MKE, Korea).",

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N2 - In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier localization in In-rich region and inhomogeneous carrier distribution. The authors investigate the efficiency droop of InGaN-based light-emitting diodes (LEDs) based on the carrier rate equation including the influence of the reduced effective active volume. It is found that efficiency droop characteristics can be modeled well without employing a large Auger recombination coefficient by assuming that only a small portion of the QWs is effectively used as active region. The presented model is expected to provide insight into the realization of droop-free operation in nitride LEDs.

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Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

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