Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement

Sihyun Kim; Dae Woong Kwon; Sangwan Kim; Ryoongbin Lee; Tae Hyeon Kim; Hyun Sun Mo; Dae Hwan Kim; Byung Gook Park

doi:10.1016/j.cap.2017.11.021

Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement

Sihyun Kim, Dae Woong Kwon, Sangwan Kim, Ryoongbin Lee, Tae Hyeon Kim, Hyun Sun Mo, Dae Hwan Kim, Byung Gook Park

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The mechanism of drift effect in pH-sensitive silicon nanowire (SiNW) ion sensitive field effect transistor (ISFET) is comprehensively studied by measuring the time-dependent drain current (I_D) and the gate capacitance (C_G) under different liquid-gate biases (V_LGs) and pH levels. It was revealed that the origin of the current drift can be divided into three different mechanisms; the bulk ionic diffusion in sensing insulator, the chemical modification of insulator surface, and the oxide etch process induced by hydroxide (OH⁻) ion. Based on the V_LG/pH dependency of current drift and the transient C_G variation, it is clearly recognized that the drift of n-type SiNW (n-SiNW) ISFET results from H⁺ diffusion in the insulator, whereas that of p-type SiNW (p-SiNW) ISFET is caused by temporal chemical modification (hydration) of the insulator, along with the oxide thickness (t_ox) reduction by OH⁻ ions.

Original language	English
Pages (from-to)	S68-S74
Journal	Current Applied Physics
Volume	18
DOIs	https://doi.org/10.1016/j.cap.2017.11.021
State	Published - Aug 2018

Bibliographical note

Publisher Copyright:
© 2017 Elsevier B.V.

Keywords

Drift effect
SiNW ISFET
pH sensor

Access to Document

10.1016/j.cap.2017.11.021

Cite this

@article{3f39ecf1490442eea4bf69d07bb182cc,

title = "Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement",

abstract = "The mechanism of drift effect in pH-sensitive silicon nanowire (SiNW) ion sensitive field effect transistor (ISFET) is comprehensively studied by measuring the time-dependent drain current (ID) and the gate capacitance (CG) under different liquid-gate biases (VLGs) and pH levels. It was revealed that the origin of the current drift can be divided into three different mechanisms; the bulk ionic diffusion in sensing insulator, the chemical modification of insulator surface, and the oxide etch process induced by hydroxide (OH−) ion. Based on the VLG/pH dependency of current drift and the transient CG variation, it is clearly recognized that the drift of n-type SiNW (n-SiNW) ISFET results from H+ diffusion in the insulator, whereas that of p-type SiNW (p-SiNW) ISFET is caused by temporal chemical modification (hydration) of the insulator, along with the oxide thickness (tox) reduction by OH− ions.",

keywords = "Drift effect, SiNW ISFET, pH sensor",

author = "Sihyun Kim and Kwon, {Dae Woong} and Sangwan Kim and Ryoongbin Lee and Kim, {Tae Hyeon} and Mo, {Hyun Sun} and Kim, {Dae Hwan} and Park, {Byung Gook}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = aug,

doi = "10.1016/j.cap.2017.11.021",

language = "English",

volume = "18",

pages = "S68--S74",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement

AU - Kim, Sihyun

AU - Kwon, Dae Woong

AU - Kim, Sangwan

AU - Lee, Ryoongbin

AU - Kim, Tae Hyeon

AU - Mo, Hyun Sun

AU - Kim, Dae Hwan

AU - Park, Byung Gook

PY - 2018/8

Y1 - 2018/8

N2 - The mechanism of drift effect in pH-sensitive silicon nanowire (SiNW) ion sensitive field effect transistor (ISFET) is comprehensively studied by measuring the time-dependent drain current (ID) and the gate capacitance (CG) under different liquid-gate biases (VLGs) and pH levels. It was revealed that the origin of the current drift can be divided into three different mechanisms; the bulk ionic diffusion in sensing insulator, the chemical modification of insulator surface, and the oxide etch process induced by hydroxide (OH−) ion. Based on the VLG/pH dependency of current drift and the transient CG variation, it is clearly recognized that the drift of n-type SiNW (n-SiNW) ISFET results from H+ diffusion in the insulator, whereas that of p-type SiNW (p-SiNW) ISFET is caused by temporal chemical modification (hydration) of the insulator, along with the oxide thickness (tox) reduction by OH− ions.

AB - The mechanism of drift effect in pH-sensitive silicon nanowire (SiNW) ion sensitive field effect transistor (ISFET) is comprehensively studied by measuring the time-dependent drain current (ID) and the gate capacitance (CG) under different liquid-gate biases (VLGs) and pH levels. It was revealed that the origin of the current drift can be divided into three different mechanisms; the bulk ionic diffusion in sensing insulator, the chemical modification of insulator surface, and the oxide etch process induced by hydroxide (OH−) ion. Based on the VLG/pH dependency of current drift and the transient CG variation, it is clearly recognized that the drift of n-type SiNW (n-SiNW) ISFET results from H+ diffusion in the insulator, whereas that of p-type SiNW (p-SiNW) ISFET is caused by temporal chemical modification (hydration) of the insulator, along with the oxide thickness (tox) reduction by OH− ions.

KW - Drift effect

KW - SiNW ISFET

KW - pH sensor

UR - http://www.scopus.com/inward/record.url?scp=85038877810&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2017.11.021

DO - 10.1016/j.cap.2017.11.021

M3 - Article

AN - SCOPUS:85038877810

SN - 1567-1739

VL - 18

SP - S68-S74

JO - Current Applied Physics

JF - Current Applied Physics

ER -

Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this