A Through Silicon Via for suppressing self-heating effect in tunnel field effect transistor

Jang Hyun Kim, Hee Sauk Jhon, Dae Woong Kwon, Sihyun Kim, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper presents tunnel field-effect transistors (TFETs) with a Through Silicon Via (TSV) integrated in a silicon on insulator (SOI) substrate. We suggest that the proposed device equipped with the TSV in a source possibly enhance the efficien1cy of heat removal. That is, the output characteristics of TFETs could be free of self-heating effect. Therefore, the technology, using TSV is expected to be a manufacturing method in that current source becomes uninfluenced with temperature.

Original languageEnglish
Title of host publication2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages112-113
Number of pages2
ISBN (Electronic)9781509007264
DOIs
StatePublished - 27 Sep 2016
Event21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States
Duration: 12 Jun 201613 Jun 2016

Publication series

Name2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016

Conference

Conference21st IEEE Silicon Nanoelectronics Workshop, SNW 2016
Country/TerritoryUnited States
CityHonolulu
Period12/06/1613/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

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