Abstract
This paper presents tunnel field-effect transistors (TFETs) with a Through Silicon Via (TSV) integrated in a silicon on insulator (SOI) substrate. We suggest that the proposed device equipped with the TSV in a source possibly enhance the efficien1cy of heat removal. That is, the output characteristics of TFETs could be free of self-heating effect. Therefore, the technology, using TSV is expected to be a manufacturing method in that current source becomes uninfluenced with temperature.
Original language | English |
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Title of host publication | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 112-113 |
Number of pages | 2 |
ISBN (Electronic) | 9781509007264 |
DOIs | |
State | Published - 27 Sep 2016 |
Event | 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 - Honolulu, United States Duration: 12 Jun 2016 → 13 Jun 2016 |
Publication series
Name | 2016 IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
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Conference
Conference | 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 |
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Country/Territory | United States |
City | Honolulu |
Period | 12/06/16 → 13/06/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.