@inproceedings{4952592647d248f28f6ca6c74004ebf4,
title = "A novel bias temperature instability characterization methodology for high-k MOSFETs",
abstract = "A characterization methodology based on a single pulse measurement for evaluating the bias temperature instability (BTI) of high-k devices has been developed. It is shown that the time dependence of the threshold voltage instability extracted from conventional DC and pulse Id-Vg measurements can be affected by the fast charge relaxation process leading to erroneous predictions of lifetime. The proposed methodology separates the relaxation effects associated with the fast transient and slower constant voltage charging and allows extracting the dependence of intrinsic threshold voltage on stress time.",
author = "Dawei Heh and Gennadi Bersuker and Rino Choi and Young, \{Chadwin D.\} and Lee, \{Byoung Hun\}",
year = "2006",
doi = "10.1109/ESSDER.2006.307719",
language = "English",
isbn = "1424403014",
series = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "387--390",
booktitle = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",
address = "United States",
note = "ESSDERC 2006 - 36th European Solid-State Device Research Conference ; Conference date: 19-09-2006 Through 21-09-2006",
}