A boosted common source line program scheme in channel stacked NAND flash memory with layer selection by multilevel operation

Do Bin Kim, Dae Woong Kwon, Seunghyun Kim, Sang Ho Lee, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In order to obtain high channel boosting potential and to reduce a program disturbance in channel stacked type with layer selection by multi-level operation (LSM), a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. To verify the validity of the new method in LSM, TCAD simulations are performed. Through TCAD simulation, it is revealed that the program disturbance characteristics is significantly improved by the proposed scheme.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages77-78
Number of pages2
ISBN (Electronic)9784863486478
DOIs
StatePublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/TerritoryJapan
CityKyoto
Period4/06/175/06/17

Bibliographical note

Publisher Copyright:
© 2017 JSAP.

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