Abstract
In order to obtain high channel boosting potential and to reduce a program disturbance in channel stacked type with layer selection by multi-level operation (LSM), a new program scheme using boosted common source line (CSL) is proposed. The proposed scheme can be achieved by applying proper bias to each layer through its own CSL. To verify the validity of the new method in LSM, TCAD simulations are performed. Through TCAD simulation, it is revealed that the program disturbance characteristics is significantly improved by the proposed scheme.
Original language | English |
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Title of host publication | 2017 Silicon Nanoelectronics Workshop, SNW 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 77-78 |
Number of pages | 2 |
ISBN (Electronic) | 9784863486478 |
DOIs | |
State | Published - 29 Dec 2017 |
Event | 22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017 |
Publication series
Name | 2017 Silicon Nanoelectronics Workshop, SNW 2017 |
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Volume | 2017-January |
Conference
Conference | 22nd Silicon Nanoelectronics Workshop, SNW 2017 |
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Country/Territory | Japan |
City | Kyoto |
Period | 4/06/17 → 5/06/17 |
Bibliographical note
Publisher Copyright:© 2017 JSAP.